The influence of thermally assisted tunneling on the performance of charge trapping memory

doi:10.1088/1674-1056/21/7/078501

Abstract We evaluate the influence of thermally assisted tunneling (ThAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of temperature, trap depth, distribution of trapped charge, gate voltage and parameters of ThAT on erasing/programming speed and retention performance. The ThAT is an indispensable mechanism in CTM. This mechanism can increase the detrapping probability of trapped charge. Our results reveal that the ThAT effect causes the sensitivity of the cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The retention performance degrades compared with the results when the ThAT mechanism is ignored.

Keywords: thermally assisted tunneling charge trapping memory erasing/programming/ retention performance

Received: 14 February 2012
Revised: 22 February 2012
Accepted manuscript online:

PACS:

85.30.-z

(Semiconductor devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB934203).

Corresponding Authors: Liu Xiao-Yan
E-mail: xyliu@ime.pku.edu.cn

Cite this article:

Peng Ya-Hua(彭雅华), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Liu Fei(刘飞), Jin Rui(金锐), and Kang Jin-Feng(康晋锋) The influence of thermally assisted tunneling on the performance of charge trapping memory 2012 Chin. Phys. B 21 078501

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