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Chin. Phys. B, 2012, Vol. 21(11): 118103    DOI: 10.1088/1674-1056/21/11/118103
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Faceting transitions in crystal growth and heteroepitaxial growth in the anisotropic phase-field crystal model

Chen Cheng, Chen Zheng, Zhang Jing, Yang Tao, Du Xiu-Juan
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
Abstract  We modify the anisotropic phase-field crystal model (APFC), and present a semi-implicit spectral method to numerically solve the dynamic equation of the APFC model. The process results in the acceleration of computations by orders of magnitude relative to the conventional explicit finite-difference scheme, thereby, allowing us to work on a large system and for a long time. The faceting transitions introduced by the increasing anisotropy in crystal growth are then discussed. In particular, we investigate the morphological evolution in heteroepitaxial growth of our model. A new formation mechanism of misfit dislocations caused by vacancy trapping is found. The regular array of misfit dislocations produces a small-angle grain boundary under the right conditions, and it could significantly change the growth orientation of epitaxial layers.
Keywords:  phase field crystal      misfit dislocations      heteroepitaxial growth     
Received:  29 November 2011      Published:  01 October 2012
PACS:  81.15.Aa (Theory and models of film growth)  
  68.55.J- (Morphology of films)  
  02.70.Hm (Spectral methods)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51075335, 51174168, 10902086, and 51274167) and the NPU Foundation for Fundamental Research, China (Grant Nos. 201109 and NPU-FFR-JC201005).
Corresponding Authors:  Chen Cheng     E-mail:  286500935@qq.com

Cite this article: 

Chen Cheng, Chen Zheng, Zhang Jing, Yang Tao, Du Xiu-Juan Faceting transitions in crystal growth and heteroepitaxial growth in the anisotropic phase-field crystal model 2012 Chin. Phys. B 21 118103

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