Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

doi:10.1088/1674-1056/26/9/096102

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 96102-096102.doi: 10.1088/1674-1056/26/9/096102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉)

1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2017-02-14 修回日期:2017-05-03 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Jia-Nan Wei E-mail:weijianan93@163.com

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

Jia-Nan Wei(魏佳男)¹, Hong-Xia Guo(郭红霞)^1,2, Feng-Qi Zhang(张凤祁)², Yin-Hong Luo(罗尹虹)², Li-Li Ding(丁李利)², Xiao-Yu Pan(潘霄宇)², Yang Zhang(张阳)¹, Yu-Hui Liu(刘玉辉)¹

1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2017-02-14 Revised:2017-05-03 Online:2017-09-05 Published:2017-09-05
Contact: Jia-Nan Wei E-mail:weijianan93@163.com

摘要/Abstract

摘要： The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to ⁶⁰Co γ-ray and then the SEU evaluation was conducted using ²⁰⁹Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.

关键词: ferroelectric random access memory, ionizing radiation effect, single event upset

Abstract: The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to ⁶⁰Co γ-ray and then the SEU evaluation was conducted using ²⁰⁹Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.

Key words: ferroelectric random access memory, ionizing radiation effect, single event upset

中图分类号: (γ-ray effects)

61.80.Ed

61.80.Jh (Ion radiation effects) 85.50.Gk (Non-volatile ferroelectric memories)

魏佳男, 郭红霞, 张凤祁, 罗尹虹, 丁李利, 潘霄宇, 张阳, 刘玉辉. Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory[J]. 中国物理B, 2017, 26(9): 96102-096102.

Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉). Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory[J]. Chin. Phys. B, 2017, 26(9): 96102-096102.

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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

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