Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

doi:10.1088/1674-1056/25/6/067304

中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/25/6/067304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Dakhlaoui H, Almansour S

Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia

收稿日期:2015-08-18 修回日期:2016-02-08 出版日期:2016-06-05 发布日期:2016-06-05
通讯作者: Dakhlaoui H E-mail:h_dakhlaoui@yahoo.fr
基金资助:
Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Dakhlaoui H, Almansour S

Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia

Received:2015-08-18 Revised:2016-02-08 Online:2016-06-05 Published:2016-06-05
Contact: Dakhlaoui H E-mail:h_dakhlaoui@yahoo.fr
Supported by:
Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

摘要/Abstract

摘要：

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al_xGa_(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al_xGa_(1-x)N width, and the aluminum concentration x_Al. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current--voltage (I-V) characteristic strongly depends on aluminum concentration x_Al. It is shown that the peak-to-valley ratio (PVR) increases with x_Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.

关键词: nitride semiconductor, resonant tunneling diode, current density

Abstract:

Key words: nitride semiconductor, resonant tunneling diode, current density

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

75.50.Pp (Magnetic semiconductors) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Dakhlaoui H, Almansour S. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes[J]. 中国物理B, 2016, 25(6): 67304-067304.

Dakhlaoui H, Almansour S. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes[J]. Chin. Phys. B, 2016, 25(6): 67304-067304.

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Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

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