High performance trench MOS barrier Schottky diode with high-k gate oxide

doi:10.1088/1674-1056/24/7/077201

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/24/7/077201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High performance trench MOS barrier Schottky diode with high-k gate oxide

翟东媛^{a b}, 朱俊^b, 赵毅^{a c}, 蔡银飞^d, 施毅^b, 郑有炓^b

a Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
b School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
d Hangzhou QP Chip Technology Co. Ltd, Hangzhou 311121, China

收稿日期:2015-01-21 修回日期:2015-02-16 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

High performance trench MOS barrier Schottky diode with high-k gate oxide

Zhai Dong-Yuan (翟东媛)^{a b}, Zhu Jun (朱俊)^b, Zhao Yi (赵毅)^{a c}, Cai Yin-Fei (蔡银飞)^d, Shi Yi (施毅)^b, Zheng You-Liao (郑有炓)^b

a Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
b School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
d Hangzhou QP Chip Technology Co. Ltd, Hangzhou 311121, China

Received:2015-01-21 Revised:2015-02-16 Online:2015-07-05 Published:2015-07-05
Contact: Zhao Yi E-mail:yizhao@zju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

摘要/Abstract

摘要：

A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.

关键词: trench MOS barrier Schottky diode, high-k gate oxide, leakage current

Abstract:

Key words: trench MOS barrier Schottky diode, high-k gate oxide, leakage current

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 77.22.Jp (Dielectric breakdown and space-charge effects)

翟东媛, 朱俊, 赵毅, 蔡银飞, 施毅, 郑有炓. High performance trench MOS barrier Schottky diode with high-k gate oxide[J]. 中国物理B, 2015, 24(7): 77201-077201.

Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓). High performance trench MOS barrier Schottky diode with high-k gate oxide[J]. Chin. Phys. B, 2015, 24(7): 77201-077201.

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High performance trench MOS barrier Schottky diode with high-k gate oxide

High performance trench MOS barrier Schottky diode with high-k gate oxide

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