中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1325-1329.doi: 10.1088/1009-1963/15/6/032

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Study on the spectral response of the Schottky photodetector of GaN

亢勇1, 李雪1, 方家熊1, 何政2, 汤英文2   

  1. (1)State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China; (2)State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China;Graduates School of Chinese Academy of Sciences, Beijing 100039, China
  • 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by Science Committee and Technology Foundation of Shanghai, China (Grant No 04dg05116).

Study on the spectral response of the Schottky photodetector of GaN

He Zheng (何政)ab, Kang Yong (亢勇)ab, Tang Ying-Wen (汤英文)ab, Li Xue (李雪)a, Fang Jia-Xiong (方家熊)a   

  1. a State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; b  Graduates School of Chinese Academy of Sciences, Beijing 100039, China
  • Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by Science Committee and Technology Foundation of Shanghai, China (Grant No 04dg05116).

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摘要： The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition (MOCVD). The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal--semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.

关键词: spectral response, Schottky photodetector, GaN

Abstract: The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition (MOCVD). The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal--semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.

Key words: spectral response, Schottky photodetector, GaN

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.60.Bt (Optoelectronic device characterization, design, and modeling)