中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1315-1319.doi: 10.1088/1009-1963/15/6/030

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Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

周旺民1, 王崇愚2, 陈涌海3, 王占国3   

  1. (1)College of Mechanical & Electrical Engineering, Zhejiang University of Technology, Hangzhou 310032, China；Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081, China; (2)Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081, China ；Department of Physics, Tsinghua University, Beijing 100084, China; (3)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2005-11-22 修回日期:2006-03-23 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 90101004) and by the National Basic Research Program of China (Grant No G2000067102).

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

Zhou Wang-Min (周旺民)ab, Wang Chong-Yu (王崇愚)bc, Chen Yong-Hai (陈涌海)d, Wang Zhan-Guo (王占国)d   

  1. a College of Mechanical & Electrical Engineering, Zhejiang University of Technology, Hangzhou 310032, Chinab Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081, China; c Department of Physics, Tsinghua University, Beijing 100084, China; d Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • Received:2005-11-22 Revised:2006-03-23 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 90101004) and by the National Basic Research Program of China (Grant No G2000067102).

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摘要： In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

关键词: quantum dots, strain and stress distribution, strain energy, finite element method

Abstract: In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

Key words: quantum dots, strain and stress distribution, strain energy, finite element method

中图分类号:  (Mechanical properties of nanoscale systems)

  • 62.25.-g
68.65.Hb (Quantum dots (patterned in quantum wells))