中国物理B ›› 2025, Vol. 34 ›› Issue (10): 106102-106102.doi: 10.1088/1674-1056/addd80

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Displacement damage effects on the p-GaN HEMT induced by neutrons at Back-n in the China Spallation Neutron Source

Yu-Fei Liu(刘宇飞)1, Li-Li Ding(丁李利)2, Yuan-Yuan Xue(薛院院)2,3, Shu-Xuan Zhang(张书瑄)1, Wei Chen(陈伟)2,†, and Yong-Tao Zhao(赵永涛)1,‡   

  1. 1 MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China;
    3 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2025-02-02 修回日期:2025-05-13 接受日期:2025-05-28 发布日期:2025-10-15
  • 通讯作者: Wei Chen, Yong-Tao Zhao E-mail:chenwei@nint.ac.cn;zhaoyongtao@xjtu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12120101005, U2030104, 12175174, 11975174, and 12105229), State Key Laboratory Foundation of Laser Interaction with Matter (Grant Nos. SKLLIM1807 and SKLLIM2106), the Postdoctoral Fellowship Program of CPSF (Grant No. GZC20241372), and National Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. NKLIPR2419).

Displacement damage effects on the p-GaN HEMT induced by neutrons at Back-n in the China Spallation Neutron Source

Yu-Fei Liu(刘宇飞)1, Li-Li Ding(丁李利)2, Yuan-Yuan Xue(薛院院)2,3, Shu-Xuan Zhang(张书瑄)1, Wei Chen(陈伟)2,†, and Yong-Tao Zhao(赵永涛)1,‡   

  1. 1 MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China;
    2 National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China;
    3 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2025-02-02 Revised:2025-05-13 Accepted:2025-05-28 Published:2025-10-15
  • Contact: Wei Chen, Yong-Tao Zhao E-mail:chenwei@nint.ac.cn;zhaoyongtao@xjtu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12120101005, U2030104, 12175174, 11975174, and 12105229), State Key Laboratory Foundation of Laser Interaction with Matter (Grant Nos. SKLLIM1807 and SKLLIM2106), the Postdoctoral Fellowship Program of CPSF (Grant No. GZC20241372), and National Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. NKLIPR2419).

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摘要： Irradiation experiments on p-GaN gate high-electron-mobility transistors (HEMTs) were conducted using neutrons at Back-streaming White Neutron (Back-n) facility at the China Spallation Neutron Source (CSNS). Two groups of devices were float-biased, while one group was ON-biased. Post-irradiation analysis revealed that the electrical performance of the devices exhibited progressive degradation with increasing Back-n fluence, with the ON-biased group demonstrating the most pronounced deterioration. This degradation was primarily characterized by a negative shift in the threshold voltage, a significant increase in reverse gate leakage current, and a slight reduction in forward gate leakage. Further analysis of the gate leakage current and capacitance-voltage characteristics indicated an elevated concentration of two-dimensional electron gas (2DEG), attributed to donor-type defects introduced within the barrier layer by Back-n irradiation. These defects act as hole traps, converting into fixed positive charges that deepen the quantum-well conduction band, thereby enhancing the 2DEG density. Additionally, through the trap-assisted tunneling mechanism, these defects serve as tunneling centers, increasing the probability of electron tunneling and consequently elevating the reverse gate leakage current.

关键词: displacement damage effects, HEMT, Back-n, CSNS, threshold voltage shift

Abstract: Irradiation experiments on p-GaN gate high-electron-mobility transistors (HEMTs) were conducted using neutrons at Back-streaming White Neutron (Back-n) facility at the China Spallation Neutron Source (CSNS). Two groups of devices were float-biased, while one group was ON-biased. Post-irradiation analysis revealed that the electrical performance of the devices exhibited progressive degradation with increasing Back-n fluence, with the ON-biased group demonstrating the most pronounced deterioration. This degradation was primarily characterized by a negative shift in the threshold voltage, a significant increase in reverse gate leakage current, and a slight reduction in forward gate leakage. Further analysis of the gate leakage current and capacitance-voltage characteristics indicated an elevated concentration of two-dimensional electron gas (2DEG), attributed to donor-type defects introduced within the barrier layer by Back-n irradiation. These defects act as hole traps, converting into fixed positive charges that deepen the quantum-well conduction band, thereby enhancing the 2DEG density. Additionally, through the trap-assisted tunneling mechanism, these defects serve as tunneling centers, increasing the probability of electron tunneling and consequently elevating the reverse gate leakage current.

Key words: displacement damage effects, HEMT, Back-n, CSNS, threshold voltage shift

中图分类号:  (Neutron radiation effects)

  • 61.80.Hg
71.55.Eq (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)