Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

doi:10.1088/1674-1056/ace034

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/ace034

Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进)^†

Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China

收稿日期:2023-04-16 修回日期:2023-06-19 接受日期:2023-06-21 出版日期:2023-11-14 发布日期:2023-11-27
通讯作者: Xiao-Jin Li E-mail:xjli@ee.ecnu.edu.cn

Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进)^†

Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China

Received:2023-04-16 Revised:2023-06-19 Accepted:2023-06-21 Online:2023-11-14 Published:2023-11-27
Contact: Xiao-Jin Li E-mail:xjli@ee.ecnu.edu.cn

摘要/Abstract

摘要： Degradation induced by the negative bias temperature instability (NBTI) can be attributed to three mutually uncoupled physical mechanisms, i.e., the generation of interface traps (Δ V_IT), hole trapping in pre-existing gate oxide defects (Δ V_HT), and the generation of gate oxide defects (Δ V_OT). In this work, the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate (HKMG) process is thoroughly studied. The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature. The effects of the three underlying subcomponents are evaluated by using the comprehensive models. It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress. Moreover, the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted. The dependence of operating lifetime on stress bias and temperature is also discussed. It is observed that NBTI lifetime significantly decreases as the stress increases. Furthermore, the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.

关键词: negative bias temperature instability (NBTI), high-k metal gate (HKMG), threshold voltage shift, interface trap, gate oxide defect

Abstract: Degradation induced by the negative bias temperature instability (NBTI) can be attributed to three mutually uncoupled physical mechanisms, i.e., the generation of interface traps (Δ V_IT), hole trapping in pre-existing gate oxide defects (Δ V_HT), and the generation of gate oxide defects (Δ V_OT). In this work, the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate (HKMG) process is thoroughly studied. The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature. The effects of the three underlying subcomponents are evaluated by using the comprehensive models. It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress. Moreover, the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted. The dependence of operating lifetime on stress bias and temperature is also discussed. It is observed that NBTI lifetime significantly decreases as the stress increases. Furthermore, the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.

Key words: negative bias temperature instability (NBTI), high-k metal gate (HKMG), threshold voltage shift, interface trap, gate oxide defect

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进). Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process[J]. 中国物理B, 2023, 32(12): 128502-128502.

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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

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