中国物理B ›› 2025, Vol. 34 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/ad9e97
Highly responsive photodetectors based on NiPS3/WS2 van der Waals type-II heterostructures
Zhiteng Li(李志腾)1, Yian Wang(王易安)2, Zhenming Qiu(邱振铭)1, Lin Wang(王琳)3, Xiaofeng Liu(刘小峰)3, Zhengwei Chen(陈政委)1,†, and Xiao Zhang(张晓)1,‡
- 1 State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 The High School Affiliated to Renmin University of China, Beijing 100080, China;
3 School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Highly responsive photodetectors based on NiPS3/WS2 van der Waals type-II heterostructures
Zhiteng Li(李志腾)1, Yian Wang(王易安)2, Zhenming Qiu(邱振铭)1, Lin Wang(王琳)3, Xiaofeng Liu(刘小峰)3, Zhengwei Chen(陈政委)1,†, and Xiao Zhang(张晓)1,‡
- 1 State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 The High School Affiliated to Renmin University of China, Beijing 100080, China;
3 School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
摘要： A heterostructure photodetector composed of few-layer NiPS$_{3}$/WS$_{2}$ is made by using mechanical exfoliation and micro-nano fabrication techniques. The photodetector exhibits a broad-band response wavelengths of ranging of 405 nm and 800 nm. Under the light illumination of 405-nm wavelength and a bias voltage of $-2$ V, the photoresponsivity is 62.6 mA/W and the specific detectivity is 8.59$\times10^{10}$ Jones. In addition, the device demonstrates a relatively fast response with rise and fall times of 70 ms and 120 ms. Theoretical calculation suggest that this excellent performance can be ascribed to the type-II band alignment at the NiPS$_{3}$/WS$_{2}$ heterostructure interface.
中图分类号: (Photoconduction and photovoltaic effects)
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