中国物理B ›› 2024, Vol. 33 ›› Issue (9): 98501-098501.doi: 10.1088/1674-1056/ad597f

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Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

Heng Yang(杨恒)1, Mingjun Ma(马明军)1, Yongfeng Pei(裴永峰)1, Yufan Kang(康雨凡)1, Jialu Yan(延嘉璐)1, Dong He(贺栋)1, Changzhong Jiang(蒋昌忠)1, Wenqing Li(李文庆)1,†, and Xiangheng Xiao(肖湘衡)1,2,‡   

  1. 1 School of Physics and Technology, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China;
    2 Wuhan Research Center for Infectious Diseases and Cancer, Chinese Academy of Medical Sciences, Wuhan 430072, China
  • 收稿日期:2024-04-17 修回日期:2024-06-08 接受日期:2024-06-19 发布日期:2024-08-15
  • 通讯作者: Wenqing Li, Xiangheng Xiao E-mail:wenqing_li@whu.edu.cn;xxh@whu.edu.cn
  • 基金资助:
    This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 12025503, U23B2072, 12074293, and 12275198) and the Fundamental Research Funds for the Center Universities (Grant Nos. 2042024kf0001 and 2042023kf0196).

Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

Heng Yang(杨恒)1, Mingjun Ma(马明军)1, Yongfeng Pei(裴永峰)1, Yufan Kang(康雨凡)1, Jialu Yan(延嘉璐)1, Dong He(贺栋)1, Changzhong Jiang(蒋昌忠)1, Wenqing Li(李文庆)1,†, and Xiangheng Xiao(肖湘衡)1,2,‡   

  1. 1 School of Physics and Technology, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China;
    2 Wuhan Research Center for Infectious Diseases and Cancer, Chinese Academy of Medical Sciences, Wuhan 430072, China
  • Received:2024-04-17 Revised:2024-06-08 Accepted:2024-06-19 Published:2024-08-15
  • Contact: Wenqing Li, Xiangheng Xiao E-mail:wenqing_li@whu.edu.cn;xxh@whu.edu.cn
  • Supported by:
    This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 12025503, U23B2072, 12074293, and 12275198) and the Fundamental Research Funds for the Center Universities (Grant Nos. 2042024kf0001 and 2042023kf0196).

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摘要： Ultraviolet photodetectors (UV PDs) are widely used in civilian, scientific, and military fields due to their high sensitivity and low false alarm rates. We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides (TMDs), which can effectively be used to extend the optical response range. The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl$_{4}$ as a light absorption layer on the surface of WS$_{2}$, significantly enhancing its UV photodetection performance. Under 365 nm laser irradiation, WS$_{2}$ PDs exhibit response speed of 24 ms/20 ms, responsivity of 660 mA/W, detectivity of $3.3\times 10^{11}$ Jones, and external quantum efficiency of 226%. Moreover, we successfully apply this doping method to other TMDs materials (such as MoS$_{2}$, MoSe$_{2}$, and WSe$_{2})$ and fabricate WS$_{2}$ lateral p-n heterojunction PDs.

关键词: two-dimensional (2D) materials, p-type doping, transition metal dichalcogenides, photodetectors

Abstract: Ultraviolet photodetectors (UV PDs) are widely used in civilian, scientific, and military fields due to their high sensitivity and low false alarm rates. We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides (TMDs), which can effectively be used to extend the optical response range. The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl$_{4}$ as a light absorption layer on the surface of WS$_{2}$, significantly enhancing its UV photodetection performance. Under 365 nm laser irradiation, WS$_{2}$ PDs exhibit response speed of 24 ms/20 ms, responsivity of 660 mA/W, detectivity of $3.3\times 10^{11}$ Jones, and external quantum efficiency of 226%. Moreover, we successfully apply this doping method to other TMDs materials (such as MoS$_{2}$, MoSe$_{2}$, and WSe$_{2})$ and fabricate WS$_{2}$ lateral p-n heterojunction PDs.

Key words: two-dimensional (2D) materials, p-type doping, transition metal dichalcogenides, photodetectors

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
85.60.Dw (Photodiodes; phototransistors; photoresistors) 85.30.Tv (Field effect devices)