中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98508-098508.doi: 10.1088/1674-1056/acd3e4

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High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

Bicheng Wang(王必成)1, Ziying Tang(汤梓荧)1, Huying Zheng(郑湖颖)1, Lisheng Wang(王立胜)1, Yaqi Wang(王亚琪)1, Runchen Wang(王润晨)1, Zhiren Qiu(丘志仁)1,†, and Hai Zhu(朱海)1,2,‡   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
    2 Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
  • 收稿日期:2023-04-24 修回日期:2023-05-08 接受日期:2023-05-10 发布日期:2023-09-01
  • 通讯作者: Zhiren Qiu, Hai Zhu E-mail:stsqzr@mail.sysu.edu.cn;zhuhai5@mail.sysu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U22A2073, 11974433, 91833301, and 11974122).

High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

Bicheng Wang(王必成)1, Ziying Tang(汤梓荧)1, Huying Zheng(郑湖颖)1, Lisheng Wang(王立胜)1, Yaqi Wang(王亚琪)1, Runchen Wang(王润晨)1, Zhiren Qiu(丘志仁)1,†, and Hai Zhu(朱海)1,2,‡   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
    2 Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
  • Received:2023-04-24 Revised:2023-05-08 Accepted:2023-05-10 Published:2023-09-01
  • Contact: Zhiren Qiu, Hai Zhu E-mail:stsqzr@mail.sysu.edu.cn;zhuhai5@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U22A2073, 11974433, 91833301, and 11974122).

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摘要： We successfully fabricate a high performance β-phase (In0.09Ga0.91)2O3 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector. The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy (PA-MBE). The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector, which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure. The device exhibits a low dark current of 40 pA (0 V), while its UV photon responsivity exceeds 450 A/W (50 V) at the peak wavelength of 232 nm with illumination intensity of 0.21 mW/cm2 and the UV/VIS rejection ratio (R232 nm/R380 nm) exceeds 4×104. Furthermore, the devices demonstrate ultrafast transient characteristics for DUV signals, with fast-rising and fast-falling times of 80 ns and 420 ns, respectively. This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga2O3 alloys to enhance the performance of InGaO solar-blind detectors. Additionally, a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system. Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

关键词: deep ultraviolet, film, photodetector, heteroepitaxy

Abstract: We successfully fabricate a high performance β-phase (In0.09Ga0.91)2O3 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector. The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy (PA-MBE). The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector, which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure. The device exhibits a low dark current of 40 pA (0 V), while its UV photon responsivity exceeds 450 A/W (50 V) at the peak wavelength of 232 nm with illumination intensity of 0.21 mW/cm2 and the UV/VIS rejection ratio (R232 nm/R380 nm) exceeds 4×104. Furthermore, the devices demonstrate ultrafast transient characteristics for DUV signals, with fast-rising and fast-falling times of 80 ns and 420 ns, respectively. This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga2O3 alloys to enhance the performance of InGaO solar-blind detectors. Additionally, a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system. Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

Key words: deep ultraviolet, film, photodetector, heteroepitaxy

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
67.30.hr (Films) 95.85.Mt (Ultraviolet (10-300 nm)) 71.20.Nr (Semiconductor compounds)