Facile integration of an Al-rich Al1-xInxN photodetector on free-standing GaN by radio-frequency magnetron sputtering

doi:10.1088/1674-1056/acbf25

中国物理B ›› 2023, Vol. 32 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/acbf25

Facile integration of an Al-rich Al_1-xIn_xN photodetector on free-standing GaN by radio-frequency magnetron sputtering

Xinke Liu(刘新科)¹, Zhichen Lin(林之晨)¹, Yuheng Lin(林钰恒)¹, Jianjin Chen(陈建金)², Ping Zou(邹苹)¹, Jie Zhou(周杰)¹, Bo Li(李博)¹, Longhai Shen(沈龙海)², Deliang Zhu(朱德亮)¹, Qiang Liu(刘强)³, Wenjie Yu(俞文杰)³, Xiaohua Li(黎晓华)¹, Hong Gu(顾泓)⁴, Xinzhong Wang(王新中)⁵, and Shuangwu Huang(黄双武)^1,†

1 College of Materials Science and Engineering, Institute of Microelectronics(IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China;
2 School of Science, Shenyang Ligong University, Shenyang 110159, China;
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 Gusu Laboratory of Materials Science, Suzhou 215123, China;
5 Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, China

收稿日期:2022-11-26 修回日期:2023-02-03 接受日期:2023-02-27 出版日期:2023-10-16 发布日期:2023-10-31
通讯作者: Shuangwu Huang E-mail:mark_huang@szu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974144, 62004127, and 12074263), Key-Area Research and Development Program of Guangdong Province (Grant Nos. 2020B010174003 and 2020B010169001), Guangdong Science Foundation for Distinguished Young Scholars (Grant No. 2022B1515020073), the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474), and the Open Project of State Key Laboratory of Functional Materials for Informatics.

Facile integration of an Al-rich Al_1-xIn_xN photodetector on free-standing GaN by radio-frequency magnetron sputtering

1 College of Materials Science and Engineering, Institute of Microelectronics(IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China;
2 School of Science, Shenyang Ligong University, Shenyang 110159, China;
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 Gusu Laboratory of Materials Science, Suzhou 215123, China;
5 Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, China

Received:2022-11-26 Revised:2023-02-03 Accepted:2023-02-27 Online:2023-10-16 Published:2023-10-31
Contact: Shuangwu Huang E-mail:mark_huang@szu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974144, 62004127, and 12074263), Key-Area Research and Development Program of Guangdong Province (Grant Nos. 2020B010174003 and 2020B010169001), Guangdong Science Foundation for Distinguished Young Scholars (Grant No. 2022B1515020073), the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474), and the Open Project of State Key Laboratory of Functional Materials for Informatics.

摘要/Abstract

摘要： Al_1-xIn_xN, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_1-xIn_xN on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al_1-xIn_xN will be enhanced by the polarization effect of a heterostructure composed of Al_1-xIn_xN and other III-nitride materials. An Al_1-xIn_xN/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^-1 under 365 nm wavelength illumination and the photodetector was determined to have the composition Al_0.75In_0.25N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_1-xIn_xN visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al_1-xIn_xN visible-light photodetectors in optical communication.

关键词: Al_1-xIn_xN, photodetector, GaN, radio-frequency magnetron sputtering, ternary alloy

Abstract: Al_1-xIn_xN, a III-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_1-xIn_xN on a free-standing GaN substrate through direct radio-frequency magnetron sputtering. The optical properties of Al_1-xIn_xN will be enhanced by the polarization effect of a heterostructure composed of Al_1-xIn_xN and other III-nitride materials. An Al_1-xIn_xN/GaN visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^-1 under 365 nm wavelength illumination and the photodetector was determined to have the composition Al_0.75In_0.25N/GaN. A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_1-xIn_xN visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method, this study expands the application of ternary alloy Al_1-xIn_xN visible-light photodetectors in optical communication.

Key words: Al_1-xIn_xN, photodetector, GaN, radio-frequency magnetron sputtering, ternary alloy

中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

77.84.Bw

07.57.Kp (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors) 71.55.Eq (III-V semiconductors) 81.15.Cd (Deposition by sputtering)

Xinke Liu(刘新科), Zhichen Lin(林之晨), Yuheng Lin(林钰恒), Jianjin Chen(陈建金), Ping Zou(邹苹), Jie Zhou(周杰), Bo Li(李博), Longhai Shen(沈龙海), Deliang Zhu(朱德亮), Qiang Liu(刘强), Wenjie Yu(俞文杰), Xiaohua Li(黎晓华), Hong Gu(顾泓), Xinzhong Wang(王新中), and Shuangwu Huang(黄双武). Facile integration of an Al-rich Al_1-xIn_xN photodetector on free-standing GaN by radio-frequency magnetron sputtering[J]. 中国物理B, 2023, 32(11): 117701-117701.

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Facile integration of an Al-rich Al_1-xIn_xN photodetector on free-standing GaN by radio-frequency magnetron sputtering

Facile integration of an Al-rich Al_1-xIn_xN photodetector on free-standing GaN by radio-frequency magnetron sputtering

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