Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

doi:10.1088/1674-1056/ac8e9c

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 46101-046101.doi: 10.1088/1674-1056/ac8e9c

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Li Cai(蔡莉)^1,†, Ya-Qing Chi(池雅庆)³, Bing Ye(叶兵)^1,‡, Yu-Zhu Liu(刘郁竹)^1,2, Ze He(贺泽)^1,2, Hai-Bin Wang(王海滨)⁴, Qian Sun(孙乾)³, Rui-Qi Sun(孙瑞琪)³, Shuai Gao(高帅)^1,2, Pei-Pei Hu(胡培培)¹, Xiao-Yu Yan(闫晓宇)^1,2, Zong-Zhen Li(李宗臻)¹, and Jie Liu(刘杰)^1,§

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Computer Science, National University of Defense Technology, Changsha 410073, China;
4 College of IoT Engineering, Hohai University, Changzhou 213022, China

收稿日期:2022-07-04 修回日期:2022-08-19 接受日期:2022-09-02 出版日期:2023-03-10 发布日期:2023-03-30
通讯作者: Li Cai, Bing Ye, Jie Liu E-mail:caili@impcas.ac.cn;yebing@impcas.ac.cn;j.liu@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 12105339, and 62174180) and the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, China (Grant No. SKLIPR2113).

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Computer Science, National University of Defense Technology, Changsha 410073, China;
4 College of IoT Engineering, Hohai University, Changzhou 213022, China

Received:2022-07-04 Revised:2022-08-19 Accepted:2022-09-02 Online:2023-03-10 Published:2023-03-30
Contact: Li Cai, Bing Ye, Jie Liu E-mail:caili@impcas.ac.cn;yebing@impcas.ac.cn;j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 12105339, and 62174180) and the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, China (Grant No. SKLIPR2113).

摘要/Abstract

摘要： The variations of single event transient (SET) pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor (FinFET) inverter chains with different driven strengths are measured at different temperatures. Three-dimensional (3D) technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature. Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase of inverter driven strength will change the layout topology, which has a complex influence on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

关键词: heavy ion, single event effect, single event transient, FinFET, inverter chain

Abstract: The variations of single event transient (SET) pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor (FinFET) inverter chains with different driven strengths are measured at different temperatures. Three-dimensional (3D) technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature. Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase of inverter driven strength will change the layout topology, which has a complex influence on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

Key words: heavy ion, single event effect, single event transient, FinFET, inverter chain

中图分类号: (Semiconductors)

61.82.Fk

61.80.Jh (Ion radiation effects) 85.30.De (Semiconductor-device characterization, design, and modeling)

Li Cai(蔡莉), Ya-Qing Chi(池雅庆), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Ze He(贺泽), Hai-Bin Wang(王海滨), Qian Sun(孙乾), Rui-Qi Sun(孙瑞琪), Shuai Gao(高帅), Pei-Pei Hu(胡培培), Xiao-Yu Yan(闫晓宇), Zong-Zhen Li(李宗臻), and Jie Liu(刘杰). Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains[J]. 中国物理B, 2023, 32(4): 46101-046101.

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Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

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