Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

doi:10.1088/1674-1056/ac81ad

中国物理B ›› 2023, Vol. 32 ›› Issue (2): 27302-027302.doi: 10.1088/1674-1056/ac81ad

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

Lijian Guo(郭力健), Weizong Xu(徐尉宗)^†, Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海)^‡

School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2022-04-19 修回日期:2022-06-23 接受日期:2022-07-18 出版日期:2023-01-10 发布日期:2023-01-31
通讯作者: Weizong Xu, Hai Lu E-mail:wz.xu@nju.edu.cn;hailu@nju.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U2141241, 62004099, 61921005, and 91850112).

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2022-04-19 Revised:2022-06-23 Accepted:2022-07-18 Online:2023-01-10 Published:2023-01-31
Contact: Weizong Xu, Hai Lu E-mail:wz.xu@nju.edu.cn;hailu@nju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U2141241, 62004099, 61921005, and 91850112).

摘要/Abstract

摘要： By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode (SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current-voltage (I-V) tests and electroluminescence spectra. Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.

关键词: GaN Schottky-pn junction diode (SPND), unipolar-carrier-conduction, low turn-on voltage

Abstract: By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode (SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current-voltage (I-V) tests and electroluminescence spectra. Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.

Key words: GaN Schottky-pn junction diode (SPND), unipolar-carrier-conduction, low turn-on voltage

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302.

参考文献

[1] Baliga B J 1982 J. Appl. Phys. 53 1759
[2] Zhang Y, Dadgar A and Palacios T 2018 J. Phys. D 51 273001
[3] Cao Y, Chu R, Li R, Chen M, Chang R and Hughes B 2016 Appl. Phys. Lett. 108 062103
[4] Wang W F, Wang J F, Zhang Y M, Li T K, Xiong R and Xu K 2020 Chin. Phys. B 29 047305
[5] Han S, Yang S and Sheng K 2019 IEEE Electron Dev. Lett. 40 1040
[6] Li Y, Wang M, Yin R, Zhang J, Tao M, Xie B, Hao Y, Yang X, Wen C P and Shen B 2020 IEEE Electron Dev. Lett. 41 329
[7] Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Dev. 48 560
[8] Hu J, Stoffels S, Lenci S, Bakeroot B, Venegas R, Groeseneken G and Decoutere S 2015 Appl. Phys. Lett. 106 083502
[9] Han S, Yang S, Li R, Wu X and Sheng K 2019 IEEE Trans. Power Electron. 34 5012
[10] Zhang Y, Sun M, Liu Z, Piedra D, Lee H S, Gao F, Fujishima T and Palacios T 2013 IEEE Trans. Electron Dev. 60 2224
[11] Ren B, Liao M, Sumiya M, Wang L, Koide Y and Sang L 2017 Appl. Phys. Express 10 051001
[12] Bian Z, Zhang T, Zhang J, Zhao S, Zhou H, Xue J, Duan X, Zhang Y, Chen J, Dang K, Ning J and Hao Y 2019 Appl. Phys. Express 12 084004
[13] Xu W Z, Fu L H, Lu H, Ren F F, Chen D J, Zhang R and Zheng Y D 2013 Chin. Phys. Lett. 30 057303
[14] Wang T T, Wang X, Li X B, Zhang J C and Ao J P 2019 Chin. Phys. Lett. 36 057101
[15] Sun Y, Kang X, Zheng Y, Lu J, Tian X, Wei K, Wu H, Wang W, Liu X and Zhang G 2019 Electronics 8 575
[16] Li W, Nomoto K, Pilla M, Pan M, Gao X, Jena D and Xing H G 2017 IEEE Trans. Electron Dev. 64 1635
[17] Hayashida T, Nanjo T, Furukawa A, Watahiki T and Yamamuka M 2018 Jpn. J. Appl. Phys. 57 040302
[18] Greenlee J D, Anderson T J, Feigelson B N, Hobart K D and Kub F J 2015 Phys. Status Solidi A 212 2772
[19] Fu K, Fu H, Liu H, Alugubelli S R, Yang T H, Huang X, Chen H, Baranowski I, Montes J, Ponce F A and Zhao Y 2018 Appl. Phys. Lett. 113 233502
[20] Makino T, Tanimoto S, Hayashi Y, Kato H, Tokuda N, Ogura M, Takeuchi D, Oyama K, Ohashi H, Okushi H and Yamasaki S 2009 Appl. Phys. Lett. 94 262101
[21] Surdi H, Ahmad M F, Koeck F, Nemanich R J, Goodnick S and Thornton T J 2020 IEEE Microw. Wireless Comp. Lett. 30 1141
[22] Jha V, Surdi H, Faizan Ahmad M, Koeck F, Nemanich R J, Goodnick S and Thornton T J 2021 Solid State Electron. 186 108154
[23] Kojima K and Okumura H 2020 Appl. Phys. Lett. 116 012103
[24] Nie K, Xu W, Ren F, Zhou D, Pan D, Ye J, Chen D, Zhang R, Zheng Y and Lu H 2020 IEEE Electron Dev. Lett. 41 469
[25] Yu L S, Qiao D, Jia L, Lau S S, Qi Y and Lau K M 2001 Appl. Phys. Lett. 79 4536
[26] Ueno K, Shibahara K, Kobayashi A and Fujioka H 2021 Appl. Phys. Lett. 118 022102
[27] Sze S M and Ng K K 2006 Physics of Semiconductor Devices (3rd edn.) (New York: Wiley)
[28] Wang Z, Lou Y, Naka S and Okada H 2011 Appl. Phys. Lett. 98 063302
[29] Wang Z, Alam M, Lou Y, Naka S and Okada H 2012 Appl. Phys. Lett. 100 043302
[30] Madelung O 1991 Semiconductor: group IV elements and III-V compound (Berlin: Springer)
[31] Michaelson H B 1978 IBM J. Res. Dev. 22 72
[32] Khadar R A, Floriduz A, Wang T and Matioli E 2021 Appl. Phys. Express 14 071006

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

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