中国物理B ›› 2020, Vol. 29 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/ab592c

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Yi-Fu Wang(王一夫), Mussaab I Niass, Fang Wang(王芳), Yu-Huai Liu(刘玉怀)   

  1. 1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
    2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
    3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
  • 收稿日期:2019-06-12 修回日期:2019-10-15 出版日期:2020-01-05 发布日期:2020-01-05
  • 通讯作者: Fang Wang, Yu-Huai Liu E-mail:iefwang@zzu.edu.cn;ieyhliu@zzu.edu.cn
  • 基金资助:
    Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Yi-Fu Wang(王一夫)1,2,3, Mussaab I Niass1,2,3, Fang Wang(王芳)1,2,3, Yu-Huai Liu(刘玉怀)1,2,3   

  1. 1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
    2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
    3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
  • Received:2019-06-12 Revised:2019-10-15 Online:2020-01-05 Published:2020-01-05
  • Contact: Fang Wang, Yu-Huai Liu E-mail:iefwang@zzu.edu.cn;ieyhliu@zzu.edu.cn
  • Supported by:
    Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).

摘要: The design of the active region structures, including the modifications of structures of the quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN laser diode (LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion, and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content AlGaN EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.

关键词: radiative recombination rate, step-like quantum barrier, aluminum-content-graded EBL

Abstract: The design of the active region structures, including the modifications of structures of the quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN laser diode (LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion, and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content AlGaN EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.

Key words: radiative recombination rate, step-like quantum barrier, aluminum-content-graded EBL

中图分类号:  (Quantum wells)

  • 73.21.Fg
73.61.Ey (III-V semiconductors) 78.60.Fi (Electroluminescence)