Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

doi:10.1088/1674-1056/28/8/087802

中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87802-087802.doi: 10.1088/1674-1056/28/8/087802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽)

1 Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-03-20 修回日期:2019-06-14 出版日期:2019-08-05 发布日期:2019-08-05
通讯作者: Guo-Dong Yuan E-mail:gdyuan@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51472229, 61422405, and 11574301), the Natural Science Foundation of Tianjin (Grant No. 14JCQNJC01000), and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 2016M600231).

Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Qi Wang(王琦)^1,2, Guo-Dong Yuan(袁国栋)^1,2, Wen-Qiang Liu(刘文强)^1,2, Shuai Zhao(赵帅)^1,2, Lu Zhang(张璐)^1,2, Zhi-Qiang Liu(刘志强)^1,2, Jun-Xi Wang(王军喜)^1,2, Jin-Min Li(李晋闽)^1,2

1 Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-03-20 Revised:2019-06-14 Online:2019-08-05 Published:2019-08-05
Contact: Guo-Dong Yuan E-mail:gdyuan@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51472229, 61422405, and 11574301), the Natural Science Foundation of Tianjin (Grant No. 14JCQNJC01000), and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 2016M600231).

摘要/Abstract

摘要：

The epitaxial growth of novel GaN-based light-emitting diode (LED) on Si (100) substrate has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells (MQWs) with different well widths are grown on semi-polar (1101) planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.

关键词: InGaN/GaN MQWs, near white light-emitting diodes, Si (100) substrate

Abstract:

Key words: InGaN/GaN MQWs, near white light-emitting diodes, Si (100) substrate

中图分类号: (III-V semiconductors)

78.66.Fd

78.66.Bz (Metals and metallic alloys) 78.67.De (Quantum wells)

王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. 中国物理B, 2019, 28(8): 87802-087802.

Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽). Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. Chin. Phys. B, 2019, 28(8): 87802-087802.

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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

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