中国物理B ›› 2019, Vol. 28 ›› Issue (9): 97801-097801.doi: 10.1088/1674-1056/ab343a

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well

Yi Li(李毅), Youhua Zhu(朱友华), Meiyu Wang(王美玉), Honghai Deng(邓洪海), Haihong Yin(尹海宏)   

  1. School of Information Science and Technology & Tongke School of Microelectronics, Nantong University, Nantong 226019, China
  • 收稿日期:2019-06-06 修回日期:2019-07-07 出版日期:2019-09-05 发布日期:2019-09-05
  • 通讯作者: Youhua Zhu E-mail:ntyouhua@ntu.edu.cn
  • 基金资助:

    Project supported by the Talent Introduction Project of Nantong University, China (Grant No. 03081055), the National Natural Science Foundation of China (Grant Nos. 61874168 and 61505090), Top-notch Academic Programs Project of Jiangsu Higher Education Institutions, China (Grant No. PPZY2015B135), the Six Top Talents of Jiangsu Province, China (Grant No. 2016-XCL-052), the Natural Science Foundation of Nantong University, China (Grant Nos. 03080666 and 14Z003), the Qing Lan Project of Jiangsu Province, China, and Key NSF Program of Jiangsu Provincial Department of Education, China (Grant No. 15KJA510004).

Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well

Yi Li(李毅), Youhua Zhu(朱友华), Meiyu Wang(王美玉), Honghai Deng(邓洪海), Haihong Yin(尹海宏)   

  1. School of Information Science and Technology & Tongke School of Microelectronics, Nantong University, Nantong 226019, China
  • Received:2019-06-06 Revised:2019-07-07 Online:2019-09-05 Published:2019-09-05
  • Contact: Youhua Zhu E-mail:ntyouhua@ntu.edu.cn
  • Supported by:

    Project supported by the Talent Introduction Project of Nantong University, China (Grant No. 03081055), the National Natural Science Foundation of China (Grant Nos. 61874168 and 61505090), Top-notch Academic Programs Project of Jiangsu Higher Education Institutions, China (Grant No. PPZY2015B135), the Six Top Talents of Jiangsu Province, China (Grant No. 2016-XCL-052), the Natural Science Foundation of Nantong University, China (Grant Nos. 03080666 and 14Z003), the Qing Lan Project of Jiangsu Province, China, and Key NSF Program of Jiangsu Provincial Department of Education, China (Grant No. 15KJA510004).

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摘要：

The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well (QW) structures with different In contents are investigated by using the six-by-six K-P method. The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fcn and hole (1-fvUm) and the approximately equal transverse electric (TE) polarization optical matrix elements (|Mx|2) for the c1-v1 transition. As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure. In addition, the type-Ⅱ QW structure with x~0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23. It can be attributed to the combined effect of|Mx|2 and fcn (1-fvUm) for the c1-v1, c1-v2, and c1-v3 transitions.

关键词: type-Ⅱ lineup, quantum well, K-P method, transverse electric (TE) polarized emission

Abstract:

The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well (QW) structures with different In contents are investigated by using the six-by-six K-P method. The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fcn and hole (1-fvUm) and the approximately equal transverse electric (TE) polarization optical matrix elements (|Mx|2) for the c1-v1 transition. As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure. In addition, the type-Ⅱ QW structure with x~0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23. It can be attributed to the combined effect of|Mx|2 and fcn (1-fvUm) for the c1-v1, c1-v2, and c1-v3 transitions.

Key words: type-Ⅱ lineup, quantum well, K-P method, transverse electric (TE) polarized emission

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
78.67.De (Quantum wells) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)