中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47802-.doi: 10.1088/1674-1056/abcf3f

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  • 收稿日期:2020-08-20 修回日期:2020-11-24 接受日期:2020-12-01 出版日期:2021-03-16 发布日期:2021-03-24

Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer

Lu Xue(薛露), Yi Li(李毅)†, Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华)   

  1. 1 School of Information Science and Technology & Tongke School of Microelectronics, Nantong University, Nantong 226019, China
  • Received:2020-08-20 Revised:2020-11-24 Accepted:2020-12-01 Online:2021-03-16 Published:2021-03-24
  • Contact: †Corresponding author. E-mail: liyi2016@ntu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61874168), the Jiangsu Province I-U-R Cooperation Project, China (Grant No. BY2019114), and the Nantong Science and Technology Project, China (Grant No. JC2019006).

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Abstract: The optical properties of AlGaN-based quantum well (QW) structure with two coupled thin well layers are investigated by the six-by-six K- P method. Compared with the conventional structure, the new structure, especially the one with lower Al-content in the barrier layer, can enhance the TE-/TM-polarized total spontaneous emission rate due to the strong quantum confinement and wide recombination region. For the conventional QW structure, the reduction of well thickness can lead the degree of polarization (DOP) to decrease and the internal quantum efficiency (IQE) to increase. By using the coupled thin well layers, the DOP for the structure with high Al-content in the barrier layer can be improved, while the DOP will further decrease with low Al-content in the barrier layer. It can be attributed to the band adjustment induced by the combination of barrier height and well layer coupling. The IQE can also be further enhanced to 14.8%-20.5% for various Al-content of barrier layer at J=100 A/cm2. In addition, the efficiency droop effect can be expected to be suppressed compared with the conventional structure.

Key words: AlGaN-based quantum well, K- P method, internal quantum efficiency, degree of polarization

中图分类号:  (III-V semiconductors)

  • 78.66.Fd
78.67.De (Quantum wells) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)