Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

doi:10.1088/1674-1056/28/6/068504

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 68504-068504.doi: 10.1088/1674-1056/28/6/068504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

1 Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Physics, Xiamen University, Xiamen 361005, China

收稿日期:2019-03-03 修回日期:2019-04-04 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Feng Zhang E-mail:fzhang@semi.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the Science Challenge Project, China (Grant No. TZ2018003), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61804149), the Beijing NOVA Program, China (Grant Nos. 2016071 and Z181100006218121), the Beijing Municipal Science and Technology Commission Project, China (Grant No. Z161100002116018), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2012098).

Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

Zheng-Xin Wen(温正欣)^1,2, Feng Zhang(张峰)^1,2,3, Zhan-Wei Shen(申占伟)¹, Jun Chen(陈俊)^1,2, Ya-Wei He(何亚伟)^1,2, Guo-Guo Yan(闫果果)¹, Xing-Fang Liu(刘兴昉)¹, Wan-Shun Zhao(赵万顺)¹, Lei Wang(王雷)¹, Guo-Sheng Sun(孙国胜)^1,2, Yi-Ping Zeng(曾一平)^1,2

1 Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Physics, Xiamen University, Xiamen 361005, China

Received:2019-03-03 Revised:2019-04-04 Online:2019-06-05 Published:2019-06-05
Contact: Feng Zhang E-mail:fzhang@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the Science Challenge Project, China (Grant No. TZ2018003), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61804149), the Beijing NOVA Program, China (Grant Nos. 2016071 and Z181100006218121), the Beijing Municipal Science and Technology Commission Project, China (Grant No. Z161100002116018), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2012098).

摘要/Abstract

摘要：

10-kV 4H-SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm² with a die size of 3 mm×3 mm. A step space modulated junction termination extension (SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs. The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at -10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell (H-cell) structure is designed and compared with the conventional interdigital cell (I-cell) structure. At an on-state current of 50 A/cm², the voltage drops of I-cell IGBT and H-cell IGBT are 10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm², the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm² and 38.9 A/cm² with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 mΩ·cm² and 56.92 mΩ·cm², respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.

关键词: silicon carbide, power device, insulated gate bipolar transistors (IGBTs), high voltage

Abstract:

Key words: silicon carbide, power device, insulated gate bipolar transistors (IGBTs), high voltage

中图分类号: (Field effect devices)

85.30.Tv

85.30.Pq (Bipolar transistors) 85.30.De (Semiconductor-device characterization, design, and modeling)

温正欣, 张峰, 申占伟, 陈俊, 何亚伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平. Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. 中国物理B, 2019, 28(6): 68504-068504.

Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. Chin. Phys. B, 2019, 28(6): 68504-068504.

参考文献 28

[1]	Kimoto T and Cooper J A 2014 Fundamentals of silicon carbide technology: growth, characterization, devices and applications (John Wiley & Sons) doi: mentals of silicon carbide technology: growth, characterization, devices and applications ???John Wiley\|\|
[2]	Song Q W, Tang X Y, Yuan H, Wang Y H, Zhang Y M, Guo H, Jia R X, Lv H L, Zhang Y M and Zhang Y M 2016 Chin. Phys. B 25 047102 doi: 10.1088/1674-1056/25/4/047102
[3]	Song Q W, Tang X Y, He Y J, Tang G N, Wang Y H, Zhang Y M, Guo H, Jia R X, Lv H L and Zhang Y M 2016 Chin. Phys. B 25 037306 doi: 10.1088/1674-1056/25/3/037306
[4]	Lin D, Guo-Sheng S, Jun Y, Liu Z, Xing-Fang L, Feng Z, Guo-Guo Y, Xi-Guang L, Zhan-Guo W and Fei Y 2013 Chin. Phys. Lett. 30 096105 doi: 10.1088/0256-307X/30/9/096105
[5]	Wang J, Zhao T, Li J, Huang A Q, Callanan R, Husna F and Agarwal A 2008 IEEE Trans. Electron. Dev. 55 1798 doi: 10.1109/TED.2008.926650
[6]	Das M K, Zhang Q J, Callanan R, Capell C, Clayton J, Donofrio M, Haney S K, Husna F, Jonas C and Richmond J 2009 Materials Science Forum 600-603 1183
[7]	Van Brunt E, Cheng L, O'Loughlin M J, Richmond J, Pala V, Palmour J W, Tipton C W and Scozzie C 2015 Materials Science Forum 821-823 847 doi: 10.4028/www.scientific.net/MSF.821-823.847
[8]	Brunt E, Cheng L, O'Loughlin M, Capell C, Jonas C, Lam K, Richmond J, Pala V, Ryu S and Allen S 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 15-19 June, 2014, Waikoloa, HI, USA, p. 358 doi: 26th International Symposium on Power Semiconductor Devices\|\|
[9]	Brunt E, Cheng L, O'Loughlin M, Capell C, Jonas C, Lam K, Richmond J, Pala V, Ryu S and Allen S 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 358-361 doi: 26th International Symposium on Power Semiconductor Devices\|\|
[10]	Sui Y, Wang X and Cooper J 2007 IEEE Electron Dev. Lett. 28 728 doi: 10.1109/LED.2007.901582
[11]	Zhang Q, Das M, Sumakeris J, Callanan R and Agarwal A 2008 IEEE Electron Dev. Lett. 29 1027 doi: 10.1109/LED.2008.2001739
[12]	Zhang Q, Wang J, Jonas C, Callanan R, Sumakeris J J, Ryu S H, Das M, Agarwal A, Palmour J and Huang A Q 2008 IEEE Trans. Electron. Dev. 55 1912 doi: 10.1109/TED.2008.926627
[13]	Katakami S, Fujisawa H, Takenaka K, Ishimori H, Takasu S, Okamoto M, Arai M, Yonezawa Y and Fukuda K 2013 Mater. Sci. Forum 740-742 958 doi: 10.4028/www.scientific.net/MSF.740-742.958
[14]	Wang Y, Tang K, Khan T, Balasubramanian M K, Naik H, Wang W and Chow T P 2008 IEEE Trans. Electron. Dev. 55 2046 doi: 10.1109/TED.2008.926674
[15]	Vellvehí M, Flores D, Jordá X, Hidalgo S, Rebollo J, Coulbeck L and Waind P 2004 Microelectron. J. 35 269 doi: 10.1016/S0026-2692(03)00188-5
[16]	Das M K, Haney S K, Richmond J, Olmedo A, Zhang Q J and Ring Z 2012 Mater. Sci. Forum 717-720 1073 doi: 10.4028/www.scientific.net/MSF.717-720.1073
[17]	Feng G, Suda J and Kimoto T 2012 IEEE Trans. Electron. Dev. 59 414 doi: 10.1109/TED.2011.2175486
[18]	Zhou C N, Wang Y, Yue R F, Dai G and Li J T 2017 IEEE Trans. Electron. Dev. 64 1193 doi: 10.1109/TED.2017.2648886
[19]	Pan J, Cooper J and Melloch M 1995 Electron. Lett. 31 1200 doi: 10.1049/el:19950800
[20]	Capano M A, Cooper Jr J, Melloch M, Saxler A and Mitchel W 2000 J. Appl. Phys. 87 8773 doi: 10.1063/1.373609
[21]	Shen Z W, Zhang F, Dimitrijev S, Han J S, Yan G G, Wen Z X, Zhao W S, Wang L, Liu X F and Sun G S 2017 Chin. Phys. B 26 107101 doi: 10.1088/1674-1056/26/10/107101
[22]	Sun Q J, Zhang Y M, Song Q W, Tang X Y, Zhang Y M, Li C Z, Zhao Y L and Zhang Y M 2017 Chin. Phys. B 26 127701 doi: 10.1088/1674-1056/26/12/127701
[23]	Konishi R, Yasukochi R, Nakatsuka O, Koide Y, Moriyama M and Murakami M 2003 Mater. Sci. Eng. B 98 286 doi: 10.1016/S0921-5107(03)00065-5
[24]	Pesic I, Navarro D, Miyake M and Miura-Mattausch M 2014 Solid-State Electron. 101 126 doi: 10.1016/j.sse.2014.06.023
[25]	Cooper J, Tamaki T, Walden G, Sui Y, Wang S and Wang X 2009 IEEE International Electron Devices Meeting (IEDM), 7-9 December, 2009, Baltimore, MD, USA, p. 1
[26]	Okamoto D, Sometani M, Harada S, Kosugi R, Yonezawa Y and Yano H 2014 IEEE Electron Dev. Lett. 35 1176 doi: 10.1109/LED.2014.2362768
[27]	Kimoto T, Kawahara K, Zippelius B, Saito E and Suda J 2016 Superlattices Microstructures 99 151 doi: 10.1016/j.spmi.2016.03.029
[28]	Wen Z, Zhang F, Shen Z, Tian L, Yan G, Liu X, Wang L, Zhao W, Sun G and Zeng Y 2017 IEEE Electron Dev. Lett. 38 941 doi: 10.1109/LED.2017.2709322

Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

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