Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

doi:10.1088/1674-1056/26/10/108505

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/26/10/108505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明)

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

收稿日期:2017-06-09 修回日期:2017-07-27 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Hongbin Pu E-mail:puhongbin@xaut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明)

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

Received:2017-06-09 Revised:2017-07-27 Online:2017-10-05 Published:2017-10-05
Contact: Hongbin Pu E-mail:puhongbin@xaut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

摘要/Abstract

摘要： To overcome hole-injection limitation of p⁺-n emitter junction in 4H-SiC light triggered thyristor, a novel high-voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p⁺-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm² ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

关键词: silicon carbide, light triggered thyristor, double-deck thin n-base, injection modulation

Abstract: To overcome hole-injection limitation of p⁺-n emitter junction in 4H-SiC light triggered thyristor, a novel high-voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p⁺-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm² ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

Key words: silicon carbide, light triggered thyristor, double-deck thin n-base, injection modulation

中图分类号: (Thyristors)

85.30.Rs

85.30.De (Semiconductor-device characterization, design, and modeling) 85.60.Bt (Optoelectronic device characterization, design, and modeling) 02.60.Cb (Numerical simulation; solution of equations)

王曦, 蒲红斌, 刘青, 陈春兰, 陈治明. Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base[J]. 中国物理B, 2017, 26(10): 108505-108505.

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明). Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base[J]. Chin. Phys. B, 2017, 26(10): 108505-108505.

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Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

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