中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/26/10/108505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明)   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2017-06-09 修回日期:2017-07-27 出版日期:2017-10-05 发布日期:2017-10-05
  • 通讯作者: Hongbin Pu E-mail:puhongbin@xaut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明)   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • Received:2017-06-09 Revised:2017-07-27 Online:2017-10-05 Published:2017-10-05
  • Contact: Hongbin Pu E-mail:puhongbin@xaut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

摘要: To overcome hole-injection limitation of p+-n emitter junction in 4H-SiC light triggered thyristor, a novel high-voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p+-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

关键词: silicon carbide, light triggered thyristor, double-deck thin n-base, injection modulation

Abstract: To overcome hole-injection limitation of p+-n emitter junction in 4H-SiC light triggered thyristor, a novel high-voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p+-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

Key words: silicon carbide, light triggered thyristor, double-deck thin n-base, injection modulation

中图分类号:  (Thyristors)

  • 85.30.Rs
85.30.De (Semiconductor-device characterization, design, and modeling) 85.60.Bt (Optoelectronic device characterization, design, and modeling) 02.60.Cb (Numerical simulation; solution of equations)