Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

doi:10.1088/1674-1056/27/10/108502

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/27/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪)

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

收稿日期:2018-04-30 修回日期:2018-06-29 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Hong-Bin Pu E-mail:puhongbin@xaut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪)

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

Received:2018-04-30 Revised:2018-06-29 Online:2018-10-05 Published:2018-10-05
Contact: Hong-Bin Pu E-mail:puhongbin@xaut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

摘要/Abstract

摘要：

A new 4H-SiC light triggered thyristor (LTT) with 7-shaped thin n-base doping profile is proposed and simulated using a two-dimensional numerical method. In this new structure, the bottom region of the thin n-base has a graded doping profile to induce an accelerating electric field and compensate for the shortcoming of the double-layer thin n-base structure in transmitting injected holes. In addition, the accelerating electric field can also speed up the transmission of photon-generated carriers during light triggering. As a result, the current gain of the top pnp transistor of the SiC LTT is further increased. According to the TCAD simulations, the turn-on delay time of the SiC LTT decreases by about 91.5% compared with that of previous double-layer thin n-base SiC LTT. The minimum turn-on delay time of the SiC LTT is only 828 ns, when triggered by 100 mW/cm² ultraviolet light. Meanwhile, there is only a slight degradation in the forward blocking characteristic.

关键词: silicon carbide, light triggered thyristor, 7-shaped doping profile, turn-on delay

Abstract:

Key words: silicon carbide, light triggered thyristor, 7-shaped doping profile, turn-on delay

中图分类号: (Thyristors)

85.30.Rs

85.30.De (Semiconductor-device characterization, design, and modeling) 85.60.Bt (Optoelectronic device characterization, design, and modeling) 02.60.Cb (Numerical simulation; solution of equations)

王曦, 蒲红斌, 刘青, 安丽琪. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile[J]. 中国物理B, 2018, 27(10): 108502-108502.

Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪). Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile[J]. Chin. Phys. B, 2018, 27(10): 108502-108502.

参考文献 23

[1]	Song X, Huang A Q, Lee M and Peng C 2017 IEEE Trans. Power Electr. 32 6381 doi: 10.1109/TPEL.2016.2616841
[2]	Schrock J A, Hirsch E A, Lacouture S, Kelley M D, Bilbao A V, Ray W B, Bayne S B, Giesselmann M, O'Brien H and Ogunniyi A 2016 IEEE Trans. Power Electr. 31 8058
[3]	Chow T P 2014 Mater. Sci. Forum 778 1077
[4]	Wang J and Huang A Q 2009 IEEE Trans. Power Electr. 24 1189 doi: 10.1109/TPEL.2009.2013861
[5]	Zhou C, Wang Y, Yue, R, Dai G and Li J 2017 IEEE Trans. Power Electr. 64 1193
[6]	Mojab A, Mazumder S K 2015 IEEE Electron. Dev. Lett. 36 484 doi: 10.1109/LED.2015.2411218
[7]	Hasegawa J, Pace L, Phung L V, Hatano M and Planson D 2017 IEEE Trans. Electron. Dev. 64 1203 doi: 10.1109/TED.2017.2657223
[8]	Rumyantsev S L, Levinshtein M E, Saxena T, Shur M S, Cheng L, Palmour J W and Agarwal A 2014 Semicond. Sci. Tech. 29 115003 doi: 10.1088/0268-1242/29/11/115003
[9]	Rumyantsev S L, Levinshtein M E, Shur M S, Saxena T, Zhang Q J, Agarwal A K and Palmour J W 2012 Semicond. Sci. Tech. 27 015012 doi: 10.1088/0268-1242/27/1/015012
[10]	Mojab A, Mazumder S K, Cheng L, Agarwal A K and Soczzie C J IEEE 26th international Symposium on Power Semiconducvtor Devices & IC's, July 2014, Waikoloa HI, USA, pp. 313-316
[11]	Levinshtein M E, Ivanov P A, Agarwal A K and Palmour J W 2002 Electron. Lett. 38 592 doi: 10.1049/el:20020415
[12]	Dheilly N, Paques G, Scharnholz S, Bevilacqua P, Raynaud C, Nguyen D M, De Doncker R W and Planson D 2011 Electron. Lett. 47 459 doi: 10.1049/el.2010.7041
[13]	Dheilly N, Planson D, Pâques G and Scharnholz S 2012 Solid-State Electron. 73 32 doi: 10.1016/j.sse.2012.02.007
[14]	Mnatsakanov T T, Yurkov S N, Levinshtein M E, Cheng L and Palmour J W 2014 Semicond. Sci. Tech. 29 055005 doi: 10.1088/0268-1242/29/5/055005
[15]	Levinshtein M E, Mnatsakanov T, Agarwal A K and Palmour J W 2011 Semicond. Sci. Tech. 26 055024 doi: 10.1088/0268-1242/26/5/055024
[16]	Wang X, Pu H B, Liu Q, Chen C L and Chen Z M 2017 Chin. Phys. B 26 108505 doi: 10.1088/1674-1056/26/10/108505
[17]	Zhang J, Fursin L, Li X, Wang X, Zhao J, VanMil B L, Myers-Ward R L, Eddy C R and Gaskill D K 2009 Mater. Sci. Forum 615-617 829 doi: 10.4028/www.scientific.net/MSF.615-617.829
[18]	Yuan L, Zhang Y M, Song Q W, Tang X Y and Zhang Y M 2015 Chin. Phys. B 24 068502 doi: 10.1088/1674-1056/24/6/068502
[19]	Davydov S Y 2007 Semiconductors 41 696 doi: 10.1134/S1063782607060152
[20]	Galeckas A, Linnros J and Grivickas V 1997 Appl. Phys. Lett. 71 3269 doi: 10.1063/1.120309
[21]	Liu Y, Wang Y, Hao Y, Yu C and Cao F 2017 IEEE Trans. Electron. Dev. 64 488 doi: 10.1109/TED.2016.2639548
[22]	Kimoto T and Cooper J A 2014 Fundamentals Silicon Carbide Technology Growth Characterization Devices Applications (Singapore:John Wiley Sons) pp. 17-25, 511-515
[23]	Niwa H, Suda J and Kimoto T 2014 Mater. Sci. Forum 778-780 461 doi: 10.4028/www.scientific.net/MSF.778-780.461

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 23

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504.
[2]	Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502.
[3]	Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501.
[4]	Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. 中国物理B, 2022, 31(5): 56108-056108.
[5]	Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film[J]. 中国物理B, 2022, 31(1): 14402-014402.
[6]	Ying-Ying Yang(杨莹莹), Pei Gong(龚裴), Wan-Duo Ma(马婉铎), Rui Hao(郝锐), and Xiao-Yong Fang(房晓勇). Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes[J]. 中国物理B, 2021, 30(6): 67803-067803.
[7]	Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Improved 4H-SiC UMOSFET with super-junction shield region[J]. 中国物理B, 2021, 30(5): 58502-058502.
[8]	Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇). Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs[J]. 中国物理B, 2021, 30(10): 107801-107801.
[9]	温正欣, 张峰, 申占伟, 陈俊, 何亚伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平. Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. 中国物理B, 2019, 28(6): 68504-068504.
[10]	仲雪倩, 王珏, 王宝柱, 王珩宇, 郭清, 盛况. Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes[J]. 中国物理B, 2018, 27(8): 87102-087102.
[11]	叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304.
[12]	李文波, 李玲, 王方方, 郑柳, 夏经华, 秦福文, 王晓琳, 李永平, 刘瑞, 王德君, 潘艳, 杨霏. Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J]. 中国物理B, 2017, 26(3): 37104-037104.
[13]	王曦, 蒲红斌, 刘青, 陈春兰, 陈治明. Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base[J]. 中国物理B, 2017, 26(10): 108505-108505.
[14]	邓小川, 陈茜茜, 李诚瞻, 申华军, 张金平. Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers[J]. 中国物理B, 2016, 25(8): 87201-087201.
[15]	王卫杰, 赵振国, 赵艺, 周海京, 符策基. Design and optimization of a SiC thermal emitter/absorber composed of periodic microstructures based on a non-linear method[J]. 中国物理B, 2015, 24(9): 94213-094213.