Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
温正欣, 张峰, 申占伟, 陈俊, 何亚伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平
Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平)
中国物理B
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2019, (6): 68504
-068504
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DOI: 10.1088/1674-1056/28/6/068504