Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

doi:10.1088/1674-1056/28/6/067701

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/28/6/067701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

Xue Ji(吉雪), Wen-Xiu Dong(董文秀), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), Ke Xu(徐科)

1 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 School of Information Science and Technology, University of Science and Technology of China, Hefei 230026, China

收稿日期:2018-12-10 修回日期:2019-03-07 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Ke Xu E-mail:kxu2006@sinano.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403002), the National Science Fund for Distinguished Young Scholars, China (Grant No. Y3CHC11001), and the National Natural Science Foundation of China (Grant No. 11604368).

Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

Xue Ji(吉雪)^1,2, Wen-Xiu Dong(董文秀)², Yu-Min Zhang(张育民)^1,2, Jian-Feng Wang(王建峰)², Ke Xu(徐科)^2,3

1 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 School of Information Science and Technology, University of Science and Technology of China, Hefei 230026, China

Received:2018-12-10 Revised:2019-03-07 Online:2019-06-05 Published:2019-06-05
Contact: Ke Xu E-mail:kxu2006@sinano.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403002), the National Science Fund for Distinguished Young Scholars, China (Grant No. Y3CHC11001), and the National Natural Science Foundation of China (Grant No. 11604368).

摘要/Abstract

摘要：

One-port surface acoustic wave resonators (SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epitaxy (HVPE) and doped with Fe. The anisotropy of Rayleigh propagation and the electromechanical coupling coefficient in Fe-doped GaN are investigated. The difference in resonance frequency between the SAWs between[1120] GaN and[1100] GaN is about 0.25% for the Rayleigh propagation mode, which is smaller than that of non-intentionally doped GaN film (~1%) reported in the literature. The electromechanical coupling coefficient of Fe-doped GaN is about 3.03%, which is higher than that of non-intentionally doped GaN film. The one-port SAWR fabricated on an 8-μ Fe-doped GaN/sapphire substrate has a quality factor of 2050, and that fabricated on Fe-doped bulk GaN has a quality factor as high as 3650. All of our results indicate that high-quality bulk GaN is a very promising material for application in SAW devices.

关键词: surface acoustic wave, one-port resonator, gallium nitride (GaN), semi-insulating, Fe-doped

Abstract:

Key words: surface acoustic wave, one-port resonator, gallium nitride (GaN), semi-insulating, Fe-doped

中图分类号: (Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics)

77.65.Dq

73.61.Ey (III-V semiconductors) 81.05.Ea (III-V semiconductors)

吉雪, 董文秀, 张育民, 王建峰, 徐科. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates[J]. 中国物理B, 2019, 28(6): 67701-067701.

Xue Ji(吉雪), Wen-Xiu Dong(董文秀), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), Ke Xu(徐科). Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates[J]. Chin. Phys. B, 2019, 28(6): 67701-067701.

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Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates

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