Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

doi:10.1088/1674-1056/abf343

中国物理B ›› 2021, Vol. 30 ›› Issue (7): 74207-074207.doi: 10.1088/1674-1056/abf343

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

Jiu-Lin Yang(杨久林)¹, Guo-Ying Feng(冯国英)^1,†, Du-Xin Qing(卿杜鑫)¹, Ya-Jie Wu(吴雅婕)¹, Yun Luo(罗韵)², and Jian-Jun Wang(王建军)²

1 Institute of Laser & Micro/Nano Engineering, College of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China;
2 Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

收稿日期:2021-01-02 修回日期:2021-03-26 接受日期:2021-03-30 出版日期:2021-06-22 发布日期:2021-07-09
通讯作者: Guo-Ying Feng E-mail:guoing_feng@scu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. U1730141).

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

Jiu-Lin Yang(杨久林)¹, Guo-Ying Feng(冯国英)^1,†, Du-Xin Qing(卿杜鑫)¹, Ya-Jie Wu(吴雅婕)¹, Yun Luo(罗韵)², and Jian-Jun Wang(王建军)²

1 Institute of Laser & Micro/Nano Engineering, College of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China;
2 Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

Received:2021-01-02 Revised:2021-03-26 Accepted:2021-03-30 Online:2021-06-22 Published:2021-07-09
Contact: Guo-Ying Feng E-mail:guoing_feng@scu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. U1730141).

摘要/Abstract

摘要： High-quality Fe-doped ZnS films have been fabricated by electron beam evaporation. After the doping, the fabricated films still maintain the preferential crystalline orientation and phase purity of the host ZnS. According to the observation of surface morphology, the root mean-square roughness of the samples increases slightly with the increase of doping content. All of the prepared samples are in cubic zinc blende structure of ZnS. Transmission spectrum confirms a more obvious dip near 3 μm with higher dopant concentration and it can be attributed to the typical ⁵E→⁵T₂ transition of Fe²⁺. Fe-doped ZnS film is also successfully used for Q-switched Er:ZBLAN fiber laser.

关键词: Fe-doped ZnS film, electron beam evaporation, Q-switching, Er:ZBLAN

Abstract: High-quality Fe-doped ZnS films have been fabricated by electron beam evaporation. After the doping, the fabricated films still maintain the preferential crystalline orientation and phase purity of the host ZnS. According to the observation of surface morphology, the root mean-square roughness of the samples increases slightly with the increase of doping content. All of the prepared samples are in cubic zinc blende structure of ZnS. Transmission spectrum confirms a more obvious dip near 3 μm with higher dopant concentration and it can be attributed to the typical ⁵E→⁵T₂ transition of Fe²⁺. Fe-doped ZnS film is also successfully used for Q-switched Er:ZBLAN fiber laser.

Key words: Fe-doped ZnS film, electron beam evaporation, Q-switching, Er:ZBLAN

中图分类号: (Q-switching)

42.60.Gd

42.70.Hj (Laser materials)

Jiu-Lin Yang(杨久林), Guo-Ying Feng(冯国英), Du-Xin Qing(卿杜鑫), Ya-Jie Wu(吴雅婕), Yun Luo(罗韵), and Jian-Jun Wang(王建军). Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser[J]. 中国物理B, 2021, 30(7): 74207-074207.

参考文献

[1] Ma J, Qin Z, Xie G, Qian L and Tang D 2019 Appl. Phys. Rev. 6 021317
[2] Xu H, Xu D, Chen S, Ma W and Shi Z 2020 Remote Sens-Basel 12 1512
[3] Fang B, Bodepudi S C, Tian F, Liu X, Chang D, Du S, Lv J, Zhong J, Zhu H, Hu H, Xu Y, Xu Z, Gao W and Gao C 2020 Nat. Commun. 11 6368
[4] Fang Y, Ge Y, Wang C and Zhang H 2020 Laser Photonics Rev. 14 1900098
[5] Fedorov V, Martyshkin D and Mirov S 2018 Advanced Solid State Lasers 2018, November 4-8, 2018, Boston, USA, p. AW3A.6
[6] Fedorov V, Martyshkin D, Karki K and Mirov S 2019 Opt. Express 27 13934
[7] Loiko P, Vitkin V, Balabanov S, Dymshits O, Grigorenko K, Polishchuk A, Volokitina A, Mateos X, Serres J M and Gavrishchuk E 2019 Laser Phys. Lett. 16 065801
[8] Sorokina I T 2004 Opt. Mater. 26 395
[9] Evans J W, McDaniel S A, Stites R W, Berry P A, Cook G, Harris T R and Schepler K L 2020 Solid State Lasers XXIX: Technology and Devices, February 21, 2020, San Francisco, USA, p. 112590C
[10] Polyakov S M, Karhu E, Zamiri R, Moisset C, Iliopoulos K, Vullum P E, Osterberg U L and Gibson U J 2018 Opt. Mater. Express 8 356
[11] Lu X, Li J, Yang L, Ren J, Sun M, Yang A, Yang Z, Jain R K and Wang P 2020 Opt. Lett. 45 2676
[12] Kozlovsky V I, Korostelin Y V, Landman A I, Mislavskii V V, Podmar'kov Y P, Skasyrsky Y K and Frolov M P 2011 Quantum Electron. 41 1
[13] Fedorov V V, Martyshkin D, Mirov M, Moskalev I, Vasilyev S, Peppers J, Mirov S and Gapontsev V 2013 CLEO: Applications and Technology 2013, June 9-14, 2013, San Jose, USA, p. JM4K.2
[14] Frolov M P, Korostelin Y V, Kozlovsky V I and Podmar'kov Y P 2015 Laser. Phys. Lett. 12 055001
[15] Firsov K N, Gavrishchuk E M, Ikonnikov V B, Kazantsev S Y, Kononov I G, Rodin S A, Savin D V and Timofeeva N A 2016 Laser. Phys. Lett. 13 015001
[16] Kozlovsky V, Korostelin Y, Podmar'kov Y, Skasyrsky Y and Frolov M 2016 J. Phys: Conf. Ser. 740 012006
[17] Mirov S B, Moskalev I S, Vasilyev S, Smolski V, Fedorov V V, Martyshkin D, Peppers J, Mirov M, Dergachev A and Gapontsev V 2018 IEEE J. Sel. Topics Quantum Electron. 24 1601829
[18] Gafarov O, Martyshkin D, Fedorov V and Mirov S 2018 Solid State Lasers XXVII: Technology and Devices, February 15, 2018, San Francisco, USA, p. 105111R
[19] Kisel V, Shcherbitskii V, Kuleshov N, Postnova L and Levchenko V 2005 J. Appl. Spectrosc. 72 818
[20] Deloach L D, Page R H, Wilke G D, Payne S A and Krupke W F 1996 IEEE J. Quantum Electron. 32 885
[21] Denker B, Dorofeev V, Galagan B, Korostelin Y, Kozlovsky V, Motorin S and Sverchkov S 2018 Laser Phys. Lett. 15 105801
[22] Martinez A, Gallian A, Marine P, Fedorov V, Mirov S and Badikov V 2007 Advanced Solid-State Photonics 2007, January 28-31, 2007, Vancouver, Canada, p. TuB24
[23] Myoung N, Fedorov V V, Mirov S B and Wenger L E 2012 J. Lumin. 132 600
[24] Migal E A, Balabanov S S, Savin D V, Ikonnikov V B, Gavrishchuk E M and Potemkin F V 2021 Opt. Mater. 111 110640
[25] Molland N A, Ghadyani Z, Karhu E A, Poggio S, Nematollahi M, Kildemo M, Reenaas T W, BelBruno J J and Gibson U J 2015 Opt. Mater. Express 5 1613
[26] Sreedhar M, Neelakanta Reddy I, Bera P, Shyju T S and Anandan C 2017 Surf. Interface Anal. 49 284
[27] Shobana M and Meher S R 2019 Thin Solid Films 683 97
[28] Nilsen W G 1969 Phys. Rev. 182 838
[29] Brafman O and Mitra S S 1968 Phys. Rev. 171 931
[30] Cheng Y C, Jin C Q, Gao F, Wu X L, Zhong W, Li S H and Chu P K 2009 J. Appl. Phys. 106 123505
[31] Swanepoel R 1983 J. Phys. E-Sci. Instrum. 16 1214
[32] Minkov D and Swanepoel R 1993 Opt. Eng. 32 3333
[33] Zhang T, Feng G, Zhang H, Yang X, Dai S and Zhou S H 2016 Laser. Phys. Lett. 13 075102
[34] Ning S G, Feng G Y, Zhang H, Zhang W, Dai S Y, Xiao Y, Li W, Chen X X and Zhou S H 2018 Opt. Mater. Express 8 865

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

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