中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1417-1421.doi: 10.1088/1009-1963/16/5/041

• • 上一篇    下一篇

Electrical and optical characteristics of vanadium in 4H-SiC

王超, 张义门, 张玉明   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,\\ Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-09-16 修回日期:2006-10-27 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60376001), the National Basic Research Program of China (Grant No 2002CB311904) and the National Defense Basic Research Program of China (Grant No 51327020202).

Electrical and optical characteristics of vanadium in 4H-SiC

Wang Chao(王超)†, Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2006-09-16 Revised:2006-10-27 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60376001), the National Basic Research Program of China (Grant No 2002CB311904) and the National Defense Basic Research Program of China (Grant No 51327020202).

PDF (PC)

790

赞

摘要： A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×106\Omega .cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC-1.1eV.

关键词: semi-insulating 4H-SiC, vanadium ion implantation, annealing, activation energy

Abstract: A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×106$\Omega\cdot$cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC-1.1eV.

Key words: semi-insulating 4H-SiC, vanadium ion implantation, annealing, activation energy

中图分类号:  (Other inorganic semiconductors)

  • 73.61.Le
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 68.60.Dv (Thermal stability; thermal effects) 71.55.Ht (Other nonmetals) 78.66.Li (Other semiconductors)