Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

doi:10.1088/1674-1056/28/6/066802

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 66802-066802.doi: 10.1088/1674-1056/28/6/066802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Jing-Yuan Yan(鄢靖源), Yong-Wei Wang(王勇炜), Yong-Ming Guo(郭勇明), Wei Zhang(张伟), Cong Wang(王聪), Bao-Li An(安保礼), Dong-Fang Liu(刘东方)

1 College of Sciences, Shanghai University, Shanghai 200444, China;
2 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

收稿日期:2019-03-08 修回日期:2019-04-04 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Bao-Li An, Dong-Fang Liu E-mail:blan@shu.edu.cn;liudf@sari.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11374313) and the Young Scientists Fund of the National Nature Science Foundation of China (Grant No. 11504392).

Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Jing-Yuan Yan(鄢靖源)^1,2, Yong-Wei Wang(王勇炜)^1,2, Yong-Ming Guo(郭勇明)^1,2, Wei Zhang(张伟)², Cong Wang(王聪)², Bao-Li An(安保礼)¹, Dong-Fang Liu(刘东方)²

1 College of Sciences, Shanghai University, Shanghai 200444, China;
2 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

Received:2019-03-08 Revised:2019-04-04 Online:2019-06-05 Published:2019-06-05
Contact: Bao-Li An, Dong-Fang Liu E-mail:blan@shu.edu.cn;liudf@sari.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11374313) and the Young Scientists Fund of the National Nature Science Foundation of China (Grant No. 11504392).

摘要/Abstract

摘要：

Kerfless technology is a promising alternative for reducing cost and providing flexible thin crystals in silicon-based semiconductors. In this work we propose a protruded seed substrate technology to prepare flexible monocrystalline Si thin film economically. Grooved seed substrate is fabricated by using SiN_x thin film as a mask for the wet-etching and thermal oxidation process. After the SiN_x layer on the wedged strip is removed by hot phosphoric acid, the pre-defined structured substrate is achieved with the top of the strip serving as the seed site where there is no oxide layer. And a preferred growth of epitaxial Si on the substrate is performed by introducing an intermittent feed method for silicon source gas. The technique in this paper obviously enhances the mechanical stability of the seed structure and the growth behavior on the seed sites, compared with our previous techniques, so this technique promises to be used in the industrial fabrication of flexible Si-based devices.

关键词: kerfless, grooved seed substrate, preferred growth

Abstract:

Key words: kerfless, grooved seed substrate, preferred growth

中图分类号: (Semiconductors)

68.55.ag

68.55.-a (Thin film structure and morphology) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.16.Rf (Micro- and nanoscale pattern formation)

鄢靖源, 王勇炜, 郭勇明, 张伟, 王聪, 安保礼, 刘东方. Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology[J]. 中国物理B, 2019, 28(6): 66802-066802.

Jing-Yuan Yan(鄢靖源), Yong-Wei Wang(王勇炜), Yong-Ming Guo(郭勇明), Wei Zhang(张伟), Cong Wang(王聪), Bao-Li An(安保礼), Dong-Fang Liu(刘东方). Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology[J]. Chin. Phys. B, 2019, 28(6): 66802-066802.

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Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

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