Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

doi:10.1088/1674-1056/28/1/017303

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17303-017303.doi: 10.1088/1674-1056/28/1/017303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海)

1 School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
2 State Grid Shandong Electric Power Research Institute, Jinan 250001, China

收稿日期:2018-07-27 修回日期:2018-10-26 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Weizong Xu, Hai Lu E-mail:wz.xu@nju.edu.cn;hailu@nju.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant No. 91850112), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20161401), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, the Science and Technology Project of State Grid Corporation of China (Grant No. SGSDDK00KJJS1600071), and the Fundamental Research Funds for the Central Universities, China (Grant No. 14380098).

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Dong Zhang(张东)¹, Chenfei Wu(武辰飞)¹, Weizong Xu(徐尉宗)¹, Fangfang Ren(任芳芳)¹, Dong Zhou(周东)¹, Peng Yu(于芃)², Rong Zhang(张荣)¹, Youdou Zheng(郑有炓)¹, Hai Lu(陆海)¹

1 School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
2 State Grid Shandong Electric Power Research Institute, Jinan 250001, China

Received:2018-07-27 Revised:2018-10-26 Online:2019-01-05 Published:2019-01-05
Contact: Weizong Xu, Hai Lu E-mail:wz.xu@nju.edu.cn;hailu@nju.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant No. 91850112), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20161401), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, the Science and Technology Project of State Grid Corporation of China (Grant No. SGSDDK00KJJS1600071), and the Fundamental Research Funds for the Central Universities, China (Grant No. 14380098).

摘要/Abstract

摘要：

Self-heating effect in amorphous InGaZnO thin-film transistors remains a critical issue that degrades device performance and stability, hindering their wider applications. In this work, pulsed current-voltage analysis has been applied to explore the physics origin of self-heating induced degradation, where Joule heat is shortly accumulated by drain current and dissipated in repeated time cycles as a function of gate bias. Enhanced positive threshold voltage shift is observed at reduced heat dissipation time, higher drain current, and increased gate width. A physical picture of Joule heating assisted charge trapping process has been proposed and then verified with pulsed negative gate bias stressing scheme, which could evidently counteract the self-heating effect through the electric-field assisted detrapping process. As a result, this pulsed gate bias scheme with negative quiescent voltage could be used as a possible way to actively suppress self-heating related device degradation.

关键词: amorphous InGaZnO thin-film transistor, self-heating effect, threshold voltage shift, pulsed negative gate bias

Abstract:

Key words: amorphous InGaZnO thin-film transistor, self-heating effect, threshold voltage shift, pulsed negative gate bias

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Jc (Amorphous semiconductors; glasses)

张东, 武辰飞, 徐尉宗, 任芳芳, 周东, 于芃, 张荣, 郑有炓, 陆海. Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors[J]. 中国物理B, 2019, 28(1): 17303-017303.

Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors[J]. Chin. Phys. B, 2019, 28(1): 17303-017303.

参考文献 24

[1]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488 doi: 10.1038/nature03090
[2]	Hung M C, Hsiao H T, Lin W T, Tu C H, Chang J J and Chen P L 2011 Jpn. J. Appl. Phys. 50 03CB07
[3]	Park J S, Jeong J K, Mo Y G, Kim H D and Kim S I 2007 Appl. Phys. Lett. 90 262106 doi: 10.1063/1.2753107
[4]	Nomura K, Takagi A, Kamiya T, Ohta H, Hirano M and Hosono H 2006 Jpn. J. Appl. Phys. 45 4303 doi: 10.1143/JJAP.45.4303
[5]	Li M, Lan L, Xu M, Wang L, Xu H, Luo D, Zou J, Tao H, Yao R and Peng J 2011 J. Phys. D: Appl. Phys. 44 455102 doi: 10.1088/0022-3727/44/45/455102
[6]	Lee J H, Kim D H, Yang D J, Hong S Y, Yoon K S, Hong P S, Jeong C O, Park H S, Kim S Y, Lim S K, Kim S S, Son K S, Kim T S, Kwon J Y and Lee S Y 2008 SID Symp. Dig. Tech. Papers (London: Blackwell Publishing Ltd) p. 625
[7]	Jeong J K, Jeong J H, Choi J H, Im J S, Kim S H, Yang H W, Kang K N, Kim K S, Ahn T K, Chung H J, Kim M, Gu B S, Park J S, Mo Y G, Kim H D and Kim M 2008 SID Symp. Dig. Tech. Papers (London: Blackwell Publishing Ltd) p. 1
[8]	Huang S Y, Chang T C, Yang M C, Lin L W, Wu M H, Yang K H, Chen M C, Chiu Y J and Yeh B L 2012 Appl. Phys. Lett. 101 253502 doi: 10.1063/1.4772485
[9]	Park J S, Jeong J K, Chung H J, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 92 072104 doi: 10.1063/1.2838380
[10]	Ryu B, Noh H K, Choi E A and Chang K J 2010 Appl. Phys. Lett. 97 022108 doi: 10.1063/1.3464964
[11]	Chen T C, Chang T C, Hsieh T Y, Tsai M Y, Chen Y T, Chung Y C, Ting H C and Chen C Y 2012 Appl. Phys. Lett. 101 042101 doi: 10.1063/1.4733617
[12]	Hsieh T Y, Chang T C, Chen T C, Chen Y T, Tsai M Y, Chu A K, Chung Y C, Ting H C and Chen C Y 2013 IEEE Electron Device Lett. 34 63 doi: 10.1109/LED.2012.2223654
[13]	Hsieh T Y, Chang T C, Chen T C, Tsai M Y, Chen Y T, Chung Y C, Ting H C and Chen C Y 2012 Appl. Phys. Lett. 100 232101 doi: 10.1063/1.4723573
[14]	Kise K, Fujii M N, Bermundo J P, Ishikawa Y and Uraoka Y 2018 IEEE Electron Device Lett. 39 1322 doi: 10.1109/LED.2018.2855152
[15]	Nguyen M C, On N, Ji H, Nguyen A H T, Choi S, Cheon J, Yu K M, Cho S Y, Kim J K, Kim S, Jeong J and Choi R 2018 IEEE Trans. Electron. Devices 65 2492 doi: 10.1109/TED.2018.2826072
[16]	Huang X M, Wu C F, Lu H, Ren F F, Chen D J, Liu Y, Yu G, Zhang R, Zheng Y D and Wang Y J 2014 IEEE Electron Device Lett. 35 1034 doi: 10.1109/LED.2014.2345412
[17]	Huang X M, Wu C F, Lu H, Ren F F, Chen D J, Zhang R and Zheng Y D 2013 Appl. Phys. Lett. 102 193505 doi: 10.1063/1.4805354
[18]	Hsieh T Y, Chang T C, Chen T C, Chen Y T, Tsai M Y, Chu A K, Chung Y C, Ting H C and Chen C Y 2012 IEEE Trans. Electron. Devices 59 3389 doi: 10.1109/TED.2012.2219313
[19]	Huang X M, Zhou D, Xu W Z and Wang Y J 2018 J. Vac. Sci. Technol. B 36 040601
[20]	Wang M, Yan D, Zhang C, Xie B, Wen C P, Wang J, Hao Y, Wu W and Shen B 2014 IEEE Electron Device Lett. 35 1094 doi: 10.1109/LED.2014.2356720
[21]	Lee S M, Cho W J and Park J T 2014 IEEE Trans. Device Mater. Reliability 14 471 doi: 10.1109/TDMR.2013.2278990
[22]	Liu K H, Chang T C, Wu M S, Hung Y S, Hung P H, Hsieh T Y, Chou W C, Chu A K, Sze S M and Yeh B L 2014 Appl. Phys. Lett. 104 133503 doi: 10.1063/1.4868430
[23]	Park S, Cho E N and Yun I 2013 IEEE Trans. Electron. Devices 60 1689 doi: 10.1109/TED.2013.2253466
[24]	Fujii M, Ishikawa Y, Horita M and Uraoka Y 2011 Appl. Phys. Express 4 104103 doi: 10.1143/APEX.4.104103

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

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