中国物理B ›› 2017, Vol. 26 ›› Issue (7): 77304-077304.doi: 10.1088/1674-1056/26/7/077304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High holding voltage SCR for robust electrostatic discharge protection

Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2017-02-15 修回日期:2017-03-27 出版日期:2017-07-05 发布日期:2017-07-05
  • 通讯作者: Ming Qiao E-mail:qiaoming@uestc.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos.61376080 and 61674027) and the Natural Science Foundation of Guangdong Province,China (Grant Nos.2014A030313736 and 2016A030311022).

High holding voltage SCR for robust electrostatic discharge protection

Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2017-02-15 Revised:2017-03-27 Online:2017-07-05 Published:2017-07-05
  • Contact: Ming Qiao E-mail:qiaoming@uestc.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos.61376080 and 61674027) and the Natural Science Foundation of Guangdong Province,China (Grant Nos.2014A030313736 and 2016A030311022).

RichHTML

0

PDF (PC)

435

赞

摘要：

A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vh by adding a long N+ layer (LN+) and a long P+ layer (LP+), which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCR1:P+/Nwell/Pwell/N+ and SCR2:P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current (IESD), the two SCRs are turned on at the same time to induce the first snapback with high Vh (Vh1). As the IESD increases, the SCR2 will be turned off because of its low current gain. Therefore, the IESD will flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high Vh (Vh2). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation. An optimized Vh2 of 7.4 V with a maximum failure current (It2) of 14.7 mA/μ m is obtained by the simulation.

关键词: electrostatic discharge, holding voltage, latch-up-free, failure current

Abstract:

A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vh by adding a long N+ layer (LN+) and a long P+ layer (LP+), which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCR1:P+/Nwell/Pwell/N+ and SCR2:P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current (IESD), the two SCRs are turned on at the same time to induce the first snapback with high Vh (Vh1). As the IESD increases, the SCR2 will be turned off because of its low current gain. Therefore, the IESD will flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high Vh (Vh2). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation. An optimized Vh2 of 7.4 V with a maximum failure current (It2) of 14.7 mA/μ m is obtained by the simulation.

Key words: electrostatic discharge, holding voltage, latch-up-free, failure current

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.30.Rs (Thyristors)