Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

doi:10.1088/1674-1056/25/12/128501

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/25/12/128501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬)

Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2016-06-10 修回日期:2016-07-12 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Yuan Wang E-mail:wangyuan@pku.edu.cn
基金资助:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬)

Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2016-06-10 Revised:2016-07-12 Online:2016-12-05 Published:2016-12-05
Contact: Yuan Wang E-mail:wangyuan@pku.edu.cn
Supported by:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

摘要/Abstract

摘要：

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

关键词: electrostatic discharge (ESD), diode-triggered silicon controlled rectifier (DTSCR), transmission-line-pulsing (TLP), mathematical modeling

Abstract:

Key words: electrostatic discharge (ESD), diode-triggered silicon controlled rectifier (DTSCR), transmission-line-pulsing (TLP), mathematical modeling

中图分类号: (Junction diodes)

85.30.Kk

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 41.20.Cv (Electrostatics; Poisson and Laplace equations, boundary-value problems) 52.35.Fp (Electrostatic waves and oscillations (e.g., ion-acoustic waves))

张立忠, 王源, 何燕冬. Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress[J]. 中国物理B, 2016, 25(12): 128501-128501.

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬). Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress[J]. Chin. Phys. B, 2016, 25(12): 128501-128501.

参考文献 22

[1]	Liou J J 2012 Proc. 28th Int. Conf. Microelectronics (MIEL), May 13-16, 2012, NIS, Serbia, p. 11
[2]	Wang Y, Jia S, Sun L, Zhang G G, Zhang X and Ji L J 2007 Acta Phys. Sin. 56 7242 (in Chinese)
[3]	Chen W Y, Rosenbaum E and Ker M D 2012 IEEE Trans. Dev. Mater. Rel. 12 10
[4]	Wang Y, Jia S, Chen Z J and Ji L J 2006 Chin. Phys. 15 2297
[5]	Gauthier R, Abou-Khalil M, Chatty K, Mitra S and Li J J 2009 Proc. EOS/ESD Symp., August 30-Septemper 4, 2009, Anaheim, CA, USA, p. 1
[6]	Li J J, Sarro J D, Li Y and Gauthier R 2013 Proc. EOS/ESD Symp., Septempber 10-12, 2013, Las Vegas, NV, USA, p. 1
[7]	Ahmed G, Xia T and Gauthier R 2014 Proc. 27th Int. Conf. System-on-Chip (SOCC), Septemper 2-5, 2014, Las Vegas, NV, USA, p. 109
[8]	Zhang L Z, Wang Y, Lu G Y, Cao J and Zhang X 2015 Chin. Phys. B 24 108503
[9]	Li J J, Gauthier R, Chatty K, Mitra S, Li H M, Wang X L, Halbach R and Seguin C 2007 Proc. EOS/ESD Symp., Septemper 16-21, 2007, Anaheim, CA, USA, p. 4A.2-1
[10]	Mishra R, Li J J, Di Sarro J, Campi J and Gauthier J 2012 Proc. EOS/ESD Symp., Septemper 9-14, 2012, Tucson, AZ, USA, p. 1
[11]	Di Sarro J, Chatty K, Gauthier R and Rosenbaum E 2007 Proc. IEEE Int. Rel. Phys. Symp., April 15-19, 2007, Phoenix, AZ, USA, p. 348
[12]	Russ C, Mergens M P J, Verhaege K G, Armer J, Jozwiak P C, Kolluri G and Avery L R 2001 Proc. EOS/ESD Symp., September 11-13, 2001, Portland, OR, USA, p. 22
[13]	Jang S L, Gau M S and Lin J K 2000 Solid-State Electron. 44 1297
[14]	Marichal O, Wybo G, Van Camp B, Vanysacker P and Keppens B 2005 Proc. EOS/ESD Symp., September 8-16, 2005, Tucson, AZ, USA, p. 1
[15]	Zhang P, Wang Y, Jia S and Zhang X 2012 Semicond. Sci. Technol. 27 35006
[16]	Wang Y, Lu G Y, Cao J, Jia S, Zhang G and Zhang X 2013 Proc. IEEE Int. Physical and Failure Analysis of Integrated Circuits Symp., July 15-19, 2013, Suzhou, China, p. 720
[17]	Ker M D and Lo W Y 2000 J. Solid-State Circuit 35 601
[18]	Voldman S and Gerosa G 1994 Proc. IEEE Int. Electron Devices Meeting (IEDM), December 11-14, 1994, San Francisco, CA, USA, p. 277
[19]	Dabral S, Aslett R and Maloney T 1994 J. Electrostatics 33 357
[20]	Lin C Y, Wu P H and Ker M D 2015 IEEE Trans. Electron Dev. 63 531
[21]	Miao M, Dong S R, Wu J, Liou J J, Ma F, Li H and Han Y 2012 IEEE Electron Dev. Lett. 33 893
[22]	Shrivastava M, Schneider J, Jain R, Baghini M S, Gossner H and Rao V R 2009 Proc. EOS/ESD Symp., August 30-September 4, 2009, Anaheim, CA, USA, p. 1

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 22

相关文章 3

Metrics

本文评价

推荐阅读 0

[1]	Xi-Kun Feng(冯希昆), Xiao-Feng Gu(顾晓峰), Qin-Ling Ma(马琴玲), Yan-Ni Yang(杨燕妮), and Hai-Lian Liang(梁海莲). Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN[J]. 中国物理B, 2021, 30(7): 78502-078502.
[2]	宋文强, 侯飞, 杜飞波, 刘志伟, 刘俊杰. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. 中国物理B, 2020, 29(9): 98502-098502.
[3]	张立忠, 王源, 陆光易, 曹健, 张兴. A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology[J]. 中国物理B, 2015, 24(10): 108503-108503.