中国物理B ›› 2017, Vol. 26 ›› Issue (7): 77802-077802.doi: 10.1088/1674-1056/26/7/077802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

Wei Li(李维), Peng Jin(金鹏), Wei-Ying Wang(王维颖), De-Feng Mao(毛德丰), Xu Pan(潘旭), Xiao-Liang Wang(王晓亮), Zhan-Guo Wang(王占国)   

  1. 1 Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement, Aviation Industry Corporation of China, Beijing 100095, China;
    2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100095, China
  • 收稿日期:2017-01-03 修回日期:2017-04-08 出版日期:2017-07-05 发布日期:2017-07-05
  • 通讯作者: Peng Jin E-mail:pengjin@semi.ac.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No.2016YFB0400101) and Beijing Science and Technology Project,China (Grant No.Z151100003315024).

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

Wei Li(李维)1, Peng Jin(金鹏)2, Wei-Ying Wang(王维颖)2, De-Feng Mao(毛德丰)2, Xu Pan(潘旭)2, Xiao-Liang Wang(王晓亮)2, Zhan-Guo Wang(王占国)2   

  1. 1 Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement, Aviation Industry Corporation of China, Beijing 100095, China;
    2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100095, China
  • Received:2017-01-03 Revised:2017-04-08 Online:2017-07-05 Published:2017-07-05
  • Contact: Peng Jin E-mail:pengjin@semi.ac.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No.2016YFB0400101) and Beijing Science and Technology Project,China (Grant No.Z151100003315024).

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摘要：

AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.

关键词: AlGaN, time-resolved photoluminescence, localized excitons

Abstract:

AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.

Key words: AlGaN, time-resolved photoluminescence, localized excitons

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
78.47.jd (Time resolved luminescence)