中国物理B ›› 2016, Vol. 25 ›› Issue (12): 127304-127304.doi: 10.1088/1674-1056/25/12/127304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波)
Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波)
摘要:
A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.
中图分类号: (Semiconductor-insulator-semiconductor structures)