Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer

doi:10.1088/1674-1056/25/10/107302

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/25/10/107302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)

School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China

收稿日期:2016-05-06 修回日期:2016-06-22 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Fang Wang, Kai-Liang Zhang E-mail:fwang75@163.com;kailiang_zhang@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113, 11204212, 61404091, 51502203, and 51502204), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges, China (Grant No. 20130701).

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)

School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China

Received:2016-05-06 Revised:2016-06-22 Online:2016-10-05 Published:2016-10-05
Contact: Fang Wang, Kai-Liang Zhang E-mail:fwang75@163.com;kailiang_zhang@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113, 11204212, 61404091, 51502203, and 51502204), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges, China (Grant No. 20130701).

摘要/Abstract

摘要：

In this letter, the Ta/HfO_x/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO_x/BN bilayer device compared with that for the Ta/HfO_x/TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfO_x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfO_x/BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfO_x device.

关键词: resistive random access memory (RRAM), low-power consumption, uniformity, HfO_x

Abstract:

Key words: resistive random access memory (RRAM), low-power consumption, uniformity, HfO_x

中图分类号: (Metal-insulator-metal structures)

73.40.Rw

85.30.-z (Semiconductor devices) 85.35.-p (Nanoelectronic devices)

苏帅, 鉴肖川, 王芳, 韩叶梅, 田雨仙, 王晓旸, 张宏智, 张楷亮. Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer[J]. 中国物理B, 2016, 25(10): 107302-107302.

Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮). Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer[J]. Chin. Phys. B, 2016, 25(10): 107302-107302.

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Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

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