Resistive switching characteristic and uniformity of low-power HfO
x-based resistive random access memory with the BN insertion layer
苏帅, 鉴肖川, 王芳, 韩叶梅, 田雨仙, 王晓旸, 张宏智, 张楷亮
Resistive switching characteristic and uniformity of low-power HfO
x-based resistive random access memory with the BN insertion layer
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)
中国物理B
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2016, (10): 107302
-107302
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DOI: 10.1088/1674-1056/25/10/107302