Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

doi:10.1088/1674-1056/25/8/088504

中国物理B ›› 2016, Vol. 25 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/25/8/088504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China

收稿日期:2016-02-28 修回日期:2016-03-28 出版日期:2016-08-05 发布日期:2016-08-05
通讯作者: Xiao-Wen Xi E-mail:xixw841003@163.com
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China

Received:2016-02-28 Revised:2016-03-28 Online:2016-08-05 Published:2016-08-05
Contact: Xiao-Wen Xi E-mail:xixw841003@163.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

摘要/Abstract

摘要： An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.

关键词: PHEMT, electromagnetic pulse, damage threshold, empirical formula

Abstract: An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.

Key words: PHEMT, electromagnetic pulse, damage threshold, empirical formula

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

席晓文, 柴常春, 刘阳, 杨银堂, 樊庆扬, 史春蕾. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. 中国物理B, 2016, 25(8): 88504-088504.

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾). Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. Chin. Phys. B, 2016, 25(8): 88504-088504.

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Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

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