中国物理B ›› 2016, Vol. 25 ›› Issue (8): 88505-088505.doi: 10.1088/1674-1056/25/8/088505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

Ping Qin(秦萍), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Yuan-Wen Zhang(张苑文), Chong-Zhen Zhang(张崇臻), Ru-Peng Wang(王汝鹏), Liang-Liang Zhao(赵亮亮), Chao Xia(夏超), Song-Yang Yuan(袁松洋), Yi-an Yin(尹以安), Shu-Ti Li(李述体), Shi-Chen Su(宿世臣)   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    2 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, Guangzhou 510631, China
  • 收稿日期:2016-01-27 修回日期:2016-04-08 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Shi-Chen Su E-mail:shichensu@126.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

Ping Qin(秦萍)1, Wei-Dong Song(宋伟东)1, Wen-Xiao Hu(胡文晓)1, Yuan-Wen Zhang(张苑文)1, Chong-Zhen Zhang(张崇臻)1, Ru-Peng Wang(王汝鹏)1, Liang-Liang Zhao(赵亮亮)1, Chao Xia(夏超)1, Song-Yang Yuan(袁松洋)1, Yi-an Yin(尹以安)1,2, Shu-Ti Li(李述体)1,2, Shi-Chen Su(宿世臣)1,2   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    2 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, Guangzhou 510631, China
  • Received:2016-01-27 Revised:2016-04-08 Online:2016-08-05 Published:2016-08-05
  • Contact: Shi-Chen Su E-mail:shichensu@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

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摘要： We investigate the performances of the near-ultraviolet (about 350 nm-360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-AlxGa1-xN irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate.

关键词: AlGaN-based ultraviolet LEDs, irregular sawtooth EBL, APSYS simulation program, output power

Abstract: We investigate the performances of the near-ultraviolet (about 350 nm-360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-AlxGa1-xN irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate.

Key words: AlGaN-based ultraviolet LEDs, irregular sawtooth EBL, APSYS simulation program, output power

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.20.Bh (Theory, models, and numerical simulation) 87.16.ad (Analytical theories)