Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

doi:10.1088/1674-1056/24/4/048502

›› 2015, Vol. 24 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/24/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

于新海, 柴常春, 刘阳, 杨银堂, 席晓文

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2014-10-29 修回日期:2014-11-14 出版日期:2015-04-05 发布日期:2015-04-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant No. 60776034).

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Yu Xin-Hai (于新海), Chai Chang-Chun (柴常春), Liu Yang (刘阳), Yang Yin-Tang (杨银堂), Xi Xiao-Wen (席晓文)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2014-10-29 Revised:2014-11-14 Online:2015-04-05 Published:2015-04-05
Contact: Yu Xin-Hai E-mail:xhyu@stu.xidian.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant No. 60776034).

摘要/Abstract

摘要： The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results.

关键词: pHEMT, damage mechanism, high power microwave, pulse-width

Abstract: The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results.

Key words: pHEMT, damage mechanism, high power microwave, pulse-width

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

于新海, 柴常春, 刘阳, 杨银堂, 席晓文. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor[J]. , 2015, 24(4): 48502-048502.

Yu Xin-Hai (于新海), Chai Chang-Chun (柴常春), Liu Yang (刘阳), Yang Yin-Tang (杨银堂), Xi Xiao-Wen (席晓文). Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor[J]. Chin. Phys. B, 2015, 24(4): 48502-048502.

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Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

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