中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67306-067306.doi: 10.1088/1674-1056/25/6/067306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip
Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜)
- Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip
Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜)
- Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
摘要：
In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal-oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.
中图分类号: (III-V semiconductors)
- 73.61.Ey