Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
席晓文, 柴常春, 刘阳, 杨银堂, 樊庆扬, 史春蕾
Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
中国物理B
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2016, (8): 88504
-088504
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DOI: 10.1088/1674-1056/25/8/088504