中国物理B ›› 2016, Vol. 25 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/25/8/088504
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
摘要: An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.
中图分类号: (Field effect devices)