中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87701-087701.doi: 10.1088/1674-1056/25/8/087701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis

Man-Hong Zhang(张满红)   

  1. School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • 收稿日期:2015-11-30 修回日期:2016-03-16 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Man-Hong Zhang E-mail:zhangmanhong@ncepu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61176080).

Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis

Man-Hong Zhang(张满红)   

  1. School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • Received:2015-11-30 Revised:2016-03-16 Online:2016-08-05 Published:2016-08-05
  • Contact: Man-Hong Zhang E-mail:zhangmanhong@ncepu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61176080).

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摘要：

Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy, between room temperature and 90℃. The electron diffusion in HfO2 shows a multiple-step process. After injection, electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps: The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers. Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss. In this way, the diffusion coefficient and the average life time at different temperatures were extracted. A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.

关键词: Kelvin probe force microscopy, traps, diffusion coefficient, activation energy

Abstract:

Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy, between room temperature and 90℃. The electron diffusion in HfO2 shows a multiple-step process. After injection, electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps: The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers. Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss. In this way, the diffusion coefficient and the average life time at different temperatures were extracted. A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.

Key words: Kelvin probe force microscopy, traps, diffusion coefficient, activation energy

中图分类号: 

  • 77.55.D-
73.20.Hb (Impurity and defect levels; energy states of adsorbed species)