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Electron trapping properties at HfO
2
/SiO
2
interface, studied by Kelvin probe force microscopy and theoretical analysis
张满红
Electron trapping properties at HfO
2
/SiO
2
interface, studied by Kelvin probe force microscopy and theoretical analysis
Man-Hong Zhang(张满红)
中国物理B . 2016, (
8
): 87701 -087701 . DOI: 10.1088/1674-1056/25/8/087701