Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe12O22

doi:10.1088/1674-1056/25/8/087503

中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87503-087503.doi: 10.1088/1674-1056/25/8/087503

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂

Fen Wang(王芬), Shi-Peng Shen(申世鹏), Young Sun(孙阳)

1 Chinese Aeronautical Establishment, Beijing 100012, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-04-27 修回日期:2016-06-14 出版日期:2016-08-05 发布日期:2016-08-05
通讯作者: Young Sun E-mail:youngsun@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11534015 and 51371193).

Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂

Fen Wang(王芬)^1,2, Shi-Peng Shen(申世鹏)², Young Sun(孙阳)²

1 Chinese Aeronautical Establishment, Beijing 100012, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2016-04-27 Revised:2016-06-14 Online:2016-08-05 Published:2016-08-05
Contact: Young Sun E-mail:youngsun@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11534015 and 51371193).

摘要/Abstract

摘要：

We report on the magnetic and magnetoelectric properties of the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂, which undergoes transitions from a collinear ferrimagnetic phase to a proper screw phase at 310 K and to a longitudinal conical phase at 45 K. Magnetic and electric measurements revealed that the magnetic structure with spiral spin order can be modified by applying a magnetic field, resulting in magnetically controllable electric polarization.It was observed that BaSrZnMgFe₁₂O₂₂ exhibits an anomalous magnetoelectric memory effect: the ferroelectric state can be partially recovered from the paraelectric phase with collinear spin structure by reducing magnetic field at 20 K. We ascribe this memory effect to the pinning of multiferroic domain walls, where spin chirality and structure are preserved even in the nonpolar collinear spin state.

关键词: multiferroic, magnetoelectric effect, memory effect

Abstract:

Key words: multiferroic, magnetoelectric effect, memory effect

中图分类号: (Magnetoelectric effects, multiferroics)

75.85.+t

77.80.-e (Ferroelectricity and antiferroelectricity) 75.50.-y (Studies of specific magnetic materials)

王芬, 申世鹏, 孙阳. Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂[J]. 中国物理B, 2016, 25(8): 87503-087503.

Fen Wang(王芬), Shi-Peng Shen(申世鹏), Young Sun(孙阳). Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂[J]. Chin. Phys. B, 2016, 25(8): 87503-087503.

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Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂

Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe₁₂O₂₂

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