Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

doi:10.1088/1674-1056/25/8/087304

中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/25/8/087304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-01-26 修回日期:2016-03-31 出版日期:2016-08-05 发布日期:2016-08-05
通讯作者: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
基金资助:
Project supported by the National Science and Technology Major Project, China (Grant No. 2013ZX02308-002) and the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61404099).

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-01-26 Revised:2016-03-31 Online:2016-08-05 Published:2016-08-05
Contact: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
Supported by:
Project supported by the National Science and Technology Major Project, China (Grant No. 2013ZX02308-002) and the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61404099).

摘要/Abstract

摘要： A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage (V_B) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits.

关键词: AlGaN/GaN HEMT, enhancement-mode operation, groove-type channel, nonpolar

Abstract: A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage (V_B) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits.

Key words: AlGaN/GaN HEMT, enhancement-mode operation, groove-type channel, nonpolar

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

段小玲, 张进成, 肖明, 赵一, 宁静, 郝跃. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures[J]. 中国物理B, 2016, 25(8): 87304-087304.

Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃). Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures[J]. Chin. Phys. B, 2016, 25(8): 87304-087304.

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Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

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