Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

doi:10.1088/1674-1056/23/11/115202

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 115202-115202.doi: 10.1088/1674-1056/23/11/115202

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇下一篇

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

高飞, 张钰如, 赵书霞, 李雪春, 王友年

School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

收稿日期:2014-05-08 修回日期:2014-05-30 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11075029, 11175034, and 11205025) and the Fundamental Research Funds for Central Universities, China (Grant No. DUT12RC(3)14).

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

Gao Fei (高飞), Zhang Yu-Ru (张钰如), Zhao Shu-Xia (赵书霞), Li Xue-Chun (李雪春), Wang You-Nian (王友年)

School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

Received:2014-05-08 Revised:2014-05-30 Online:2014-11-15 Published:2014-11-15
Contact: Wang You-Nian E-mail:ynwang@dlut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11075029, 11175034, and 11205025) and the Fundamental Research Funds for Central Universities, China (Grant No. DUT12RC(3)14).

摘要/Abstract

摘要：

The inflexion point of electron density and effective electron temperature curves versus radio-frequency (RF) bias voltage is observed in the H mode of inductively coupled plasmas (ICPs). The electron energy probability function (EEPF) evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is: bias-induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.

关键词: inductively coupled plasmas, radio-frequency bias, Langmuir probe, fluid model

Abstract:

Key words: inductively coupled plasmas, radio-frequency bias, Langmuir probe, fluid model

中图分类号: (Plasma diagnostic techniques and instrumentation)

52.70.-m

52.80.Pi (High-frequency and RF discharges) 52.50.Qt (Plasma heating by radio-frequency fields; ICR, ICP, helicons)

高飞, 张钰如, 赵书霞, 李雪春, 王友年. Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias[J]. 中国物理B, 2014, 23(11): 115202-115202.

Gao Fei (高飞), Zhang Yu-Ru (张钰如), Zhao Shu-Xia (赵书霞), Li Xue-Chun (李雪春), Wang You-Nian (王友年). Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias[J]. Chin. Phys. B, 2014, 23(11): 115202-115202.

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Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

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