Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
李柳暗, 张家琦, 刘扬, 敖金平
Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平)
中国物理B . 2016, (3): 38503 -038503 .  DOI: 10.1088/1674-1056/25/3/038503