Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

doi:10.1088/1674-1056/24/10/107307

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/24/10/107307

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

王拴虎^a, 张勖^a, 邹吕宽^a, 赵靓^a, 王文鑫^{a b}, 孙继荣^a

a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

收稿日期:2015-03-19 修回日期:2015-04-27 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu (王拴虎)^a, Zhang Xu (张勖)^a, Zou Lv-Kuan (邹吕宽)^a, Zhao Jing (赵靓)^a, Wang Wen-Xin (王文鑫)^{a b}, Sun Ji-Rong (孙继荣)^a

a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Received:2015-03-19 Revised:2015-04-27 Online:2015-10-05 Published:2015-10-05
Contact: Wang Shuan-Hu E-mail:wshtzg@126.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

摘要/Abstract

摘要：

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

关键词: resistance reduction, Schottky junction, photovoltaic effect

Abstract:

Key words: resistance reduction, Schottky junction, photovoltaic effect

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

73.50.Pz (Photoconduction and photovoltaic effects) 74.25.F- (Transport properties)

王拴虎, 张勖, 邹吕宽, 赵靓, 王文鑫, 孙继荣. Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction[J]. 中国物理B, 2015, 24(10): 107307-107307.

Wang Shuan-Hu (王拴虎), Zhang Xu (张勖), Zou Lv-Kuan (邹吕宽), Zhao Jing (赵靓), Wang Wen-Xin (王文鑫), Sun Ji-Rong (孙继荣). Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction[J]. Chin. Phys. B, 2015, 24(10): 107307-107307.

参考文献 17

[1]	Schottky W 1930 Phys. Z 31 913
[2]	Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433
[3]	Luther J M, Law M, Beard M C, Song Q, Reese M O, Ellingson R J and Nozik A J 2008 Nano Lett. 8 3488
[4]	Zhu L, Shao G and Luo J K 2012 Solid State Sci. 14 857
[5]	Chen C, Ning T Y, Wang C, Zhou Y L, Zhang D X, Wang P, Ming H and Yang G Z 2011 Chin. Phys. Lett. 28 087304
[6]	Ge C, Jin K J, Lu H B, Wang C, Zhao G M, Zhang L L and Yang G Z 2010 Solid State Commun. 150 2114
[7]	Muramatsu T, Muraoka Y and Hiroi Z 2004 Solid State Commun. 132 351
[8]	Liao L, Jin K J, Lu H B, Han P, He M and Yang G Z 2009 Solid State Commun. 149 915
[9]	Niu H, Matsuda T, Sadamatsu H and Takai M 1976 Jpn. J. Appl. Phys 15 601
[10]	Liao L, Jin K J, Ge C, Hu C L, Lu H B and Yang G Z 2010 Appl. Phys. Lett. 96 062116
[11]	Wang S, Wang W, Zou L, Zhang X, Cai J, Sun Z, Shen B and Sun J 2014 Adv. Mater. 26 8059
[12]	Yu C and Wang H 2010 Adv. Mater. 22 966
[13]	Lee M J, Lee C B, Lee D, Lee S R, Chang M, Hur J H, Kim Y B, Kim C J, Seo D H, Seo S, Chung U I, Yoo I K and Kim K 2011 Nat. Mater. 10 625
[14]	Qiao S Z, Kang S S, Qin Y F, Li Q, Zhong H, Kang Y, Yu S Y, Han G B, Yan S S and Mei L M 2014 Chin. Phys. B 23 058501
[15]	Ma M, Xue Q Z, Li J P, Zhen Y H and Wang S 2011 J. Appl. Phys. 110 054503
[16]	Tyagi M S and Vanoverstraeten R 1983 Solid State Electron. 26 577
[17]	Delalamo J A and Swanson R M 1987 Solid State Electron. 30 1127

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

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