中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/22/10/107301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction

闫国英, 白子龙, 李慧玲, 傅广生, 刘富强, 于威, 王江龙, 王淑芳   

  1. The College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2013-03-24 修回日期:2013-04-12 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB612305), the National Natural Science Foundation of China (Grant No. 51372064), the One Hundred Persons Project of Hebei Province of China (Grant No. CPRC001), and the Science and Technology Research Project of Colleges and Universities in Hebei Province, China (Grant No. QN20131040).

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction

Yan Guo-Ying (闫国英), Bai Zi-Long (白子龙), Li Hui-Ling (李慧玲), Fu Guang-Sheng (傅广生), Liu Fu-Qiang (刘富强), Yu Wei (于威), Wang Jiang-Long (王江龙), Wang Shu-Fang (王淑芳)   

  1. The College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • Received:2013-03-24 Revised:2013-04-12 Online:2013-08-30 Published:2013-08-30
  • Contact: Fu Guang-Sheng, Wang Shu-Fang E-mail:fugs@hbu.edu.cn;swang2008@hotmail.com
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB612305), the National Natural Science Foundation of China (Grant No. 51372064), the One Hundred Persons Project of Hebei Province of China (Grant No. CPRC001), and the Science and Technology Research Project of Colleges and Universities in Hebei Province, China (Grant No. QN20131040).

摘要: A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap-filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude of photovoltage increases as the temperature decreases. The results demonstrate the potential application of a Bi2Sr2Co2Oy-based heterojunction in the photoelectronic devices.

关键词: Bi2Sr2Co2Oy/Si heterojunction, rectifying characteristics, photovoltaic effect, space-charge-limited current

Abstract: A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap-filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude of photovoltage increases as the temperature decreases. The results demonstrate the potential application of a Bi2Sr2Co2Oy-based heterojunction in the photoelectronic devices.

Key words: Bi2Sr2Co2Oy/Si heterojunction, rectifying characteristics, photovoltaic effect, space-charge-limited current

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
73.50.Pz (Photoconduction and photovoltaic effects) 73.61.-r (Electrical properties of specific thin films)