中国物理B ›› 2010, Vol. 19 ›› Issue (7): 77801-077801.doi: 10.1088/1674-1056/19/7/077801
王芳1, 赵嵩卿2, 李小明3, 赵昆4
Li Xiao-Ming(李小明)a)b), Wang Fang(王芳) b), Zhao Kun(赵昆)a)b)c)† , and Zhao Song-Qing(赵嵩卿)b)c)
摘要: This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of ~20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.
中图分类号: (Photoconduction and photovoltaic effects)