中国物理B ›› 2006, Vol. 15 ›› Issue (4): 839-841.doi: 10.1088/1009-1963/15/4/029

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Ultraviolet photovoltaic characteristic of MgB2 thin film

赵嵩卿, 周岳亮, 赵昆, 王淑芳, 陈正豪, 吕惠宾, 金奎娟, 程波林, 杨国桢   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2005-11-17 修回日期:2005-12-16 出版日期:2006-04-20 发布日期:2006-04-20

Ultraviolet photovoltaic characteristic of MgB2 thin film

Zhao Song-Qing (赵嵩卿), Zhou Yue-Liang (周岳亮), Zhao Kun (赵昆), Wang Shu-Fang (王淑芳), Chen Zheng-Hao (陈正豪), Lü Hui-Bin (吕惠宾), Jin Kui-Juan (金奎娟), Cheng Bo-Lin (程波林), Yang Guo-Zhen (杨国桢)   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2005-11-17 Revised:2005-12-16 Online:2006-04-20 Published:2006-04-20

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摘要： Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.

关键词: MgB2, photovoltaic effect, thin film

Abstract: Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was $\sim $185 ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.

Key words: MgB2, photovoltaic effect, thin film

中图分类号: 

  • 74.25.Fy
61.05.cp (X-ray diffraction) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 74.70.Ad (Metals; alloys and binary compounds) 74.78.-w (Superconducting films and low-dimensional structures)